Type-II InP/GaAsSb double-heterojunction bipolar transistors with fMAX > 700GHz

Applied Physics Express

Volumn 7, Issue 3, 2014, Pages

  Flückiger, Ralf ^a   Lövblom, Rickard ^a   Alexandrova, Maria ^a   Ostinelli, Olivier ^a   Bolognesi, Colombo R ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ENGINEERING; PHYSICS;

BASE CONTACT RESISTIVITY; BASE-COLLECTOR CAPACITANCE; BASE-COLLECTOR JUNCTIONS; CONTACT DEPOSITION; CURRENT BLOCKING; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH BREAKDOWN VOLTAGE; POWER GAIN CUTOFF FREQUENCIES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 84904664613     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.7567/APEX.7.034105     Document Type: Article

References (16)

1. C. R. Bolognesi, M. W. Dvorak, N. Matine, O. J. Pitts, and S. P. Watkins, Jpn. J. Appl. Phys. 41, 1131 (2002).
2. H. G. Liu, O. Ostinelli, Y. Zeng, and C. R. Bolognesi, Proc. IEDM, 2007, p. 667.
3. R. Lovblom, R. Fluckiger, Y. Zeng, O. Ostinelli, A. R. Alt, H. Benedickter, and C. R. Bolognesi, IEEE Electron Device Lett. 32, 629 (2011).
4. R. Lovblom, R. Fluckiger, M. Alexandrova, O. Ostinelli, and C. R. Bolognesi, IEEE Electron Device Lett. 34, 984 (2013).
5. Y. Miyamoto, J. M. M. Rios, A. G. Dentai, and S. Chandrasekhar, IEEE Electron Device Lett. 17, 97 (1996).
6. X. G. Xu, J. Hu, S. P. Watkins, N. Matine, M. W. Dvorak, and C. R. Bolognesi, Appl. Phys. Lett. 74, 976 (1999).
7. H. G. Liu, O. Ostinelli, Y. P. Zeng, and C. R. Bolognesi, IEEE Electron Device Lett. 28, 852 (2007).
8. M. Peter, N. Herres, F. Fuchs, K. Winkler, K.-H. Bachem, and J. Wagner, Appl. Phys. Lett. 74, 410 (1999).
9. A. Bensaada, J. T. Graham, J. L. Brebner, A. Chennouf, R. W. Cochrane, R. Leonelli, and R. A. Masut, Appl. Phys. Lett. 64, 273 (1994).
10. R. Fluckiger, R. Lovblom, O. Ostinelli, H. Benedickter, and C. R. Bolognesi, IEEE Electron Device Lett. 33, 1135 (2012).
11. T. C. Shen, G. B. Gao, and H. Morkoç, J. Vac. Sci. Technol. B 10, 2113 (1992).
12. A. Callegari, D. Lacey, and E. T.-S. Pan, Solid-State Electron. 29, 523 (1986).
13. A. Callegari, E. T. S. Pan, and M. Murakami, Appl. Phys. Lett. 46, 1141 (1985).
14. M. C. A. M. Koolen, J. A. M. Geelen, and M. P. J. G. Versleijen, Bipolar Circuits and Technology Meet., 1991, p. 188.
15. M. Rudolph, Introduction to Modeling HBTs (Artech House, Norwood, MA, 2006).
16. M. Vaidyanathan and D. J. Roulston, Solid-State Electron. 38, 509 (1995).