In0.53Ga0.47As Channel MOSFETs with self-aligned InAs source/drain formed by MEE regrowth

IEEE Electron Device Letters

Volumn 30, Issue 11, 2009, Pages 1128-1130

  Singisetti, Uttam ^a   Wistey, Mark A ^a   Burek, Gregory J ^a   Baraskar, Ashish K ^a   Thibeault, Brian J ^a   Gossard, Arthur C ^a   Rodwell, Mark J W ^a   Shin, Byungha ^b   Kim, Eun J ^b   McIntyre, Paul C ^b   Yu, Bo ^c   Yuan, Yu ^c   Wang, Dennis ^c   Taur, Yuan ^c   Asbeck, Pater ^c   Lee, Yong Ju ^d  

^a University of California   (United States)

^b Stanford University   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d INTEL CORPORATION   (United States)

Author keywords

III V MOSFET; InAs source drain; InGaAs MOSFET; Migration enhanced epitaxial regrowth; Source drain regrowth

Indexed keywords

III-V MOSFET; INAS SOURCE/DRAIN; INGAAS MOSFET; MIGRATION-ENHANCED EPITAXIAL REGROWTH; SOURCE/DRAIN REGROWTH;

GALLIUM; INDIUM ARSENIDE; OHMIC CONTACTS; SEMICONDUCTING INDIUM;

MOSFET DEVICES;

EID: 70350595903     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2031304     Document Type: Article

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