Inversion-mode self-aligned In0.53Ga0.47 As N-channel metal-oxide-semiconductor field-effect transistor with HfAlO gate dielectric and TaN metal gate

IEEE Electron Device Letters

Volumn 29, Issue 9, 2008, Pages 977-980

  Lin, J Q ^a   Lee, S J ^a   Oh, H J ^a   Lo, G Q ^a   Kwong, D L ^b   Chi, D Z ^c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

Dopant activation; InGaAs; MOSFETs; Self aligned

Indexed keywords

DOPANT ACTIVATION; INGAAS; MOSFETS; SELF-ALIGNED;

EID: 50649094761     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2001766     Document Type: Article

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