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Journal of Crystal Growth

Volumn 324, Issue 1, 2011, Pages 103-109

Compositionally-graded InGaAsInGaP alloys and GaAsSb alloys for metamorphic InP on GaAs

(4) Yang, Li a Bulsara, Mayank T b Lee, Kenneth E c Fitzgerald, Eugene A b

a MASSACHUSETTS INSTITUTE OF TECHNOLOGY (United States)

b Massachusetts Institute of Technology (United States)

c Department of Electrical Engineering and Computer Science (United States)

Author keywords

A1. Line defects; A3. Metalorganic chemical vapor deposition; B1. Alloys; B1. Antimonides; B2. Semiconducting IIIV materials; B2. Semiconducting ternary compounds

Indexed keywords

ANTIMONIDES; B1. ALLOYS; LINE DEFECTS; METALORGANIC CHEMICAL VAPOR DEPOSITION; SEMI CONDUCTING III-V MATERIALS; SEMICONDUCTING TERNARY COMPOUNDS;

ANTIMONY; CONCENTRATION (PROCESS); GALLIUM ARSENIDE; GRADING; GROWTH TEMPERATURE; INDIUM; LATTICE CONSTANTS; LIGHT POLARIZATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHASE SEPARATION; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SURFACE ROUGHNESS;

GALLIUM ALLOYS;

EID: 79957803173 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2011.04.032 Document Type: Article

Times cited : (37)

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