Abrupt delta-doped InP/GaInAs/InP DHBTs with 0.45-μm-wide T-Shaped emitter contacts

IEEE Electron Device Letters

Volumn 29, Issue 9, 2008, Pages 971-973

  Elias, Doron Cohen ^a   Gavrilov, Arkadi ^a   Cohen, Shimon ^a   Kraus, Shraga ^a   Sayag, Avi ^a   Ritter, Dan ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

Double heterojunction bipolar transistors (DHBTs); InP; Pulse doping; T shaped emitter

Indexed keywords

BIPOLAR TRANSISTORS;

DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS (DHBTS); INP; PULSE DOPING; T-SHAPED; T-SHAPED EMITTER;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 50649107548     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2001738     Document Type: Article

References (13)

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