35-nm zigzag T-gate In0.52Al0.48 As/In0.53Ga0.47As metamorphic GaAs HEMTs with an ultrahigh fmax of 520 GHz

IEEE Electron Device Letters

Volumn 28, Issue 8, 2007, Pages 672-675

  Lee, Kang Sung ^a   Kim, Young Su ^a   Hong, Yun Ki ^a   Jeong, Yoon Ha ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

High electron mobility transistor (HEMT); Metamorphic; Metamorphic high electron mobility transistor (mHEMT); Nanometer scale T gate; Zigzag T gate

Indexed keywords

DRAIN CURRENT; GATES (TRANSISTOR); SEMICONDUCTING GALLIUM ARSENIDE; TRANSCONDUCTANCE;

METAMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR (MHEMT);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34547799012     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.901579     Document Type: Article

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