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Solid-State Electronics

Volumn 46, Issue 6, 2002, Pages 867-876

Doping induced design considerations for InP/In0.53Ga0.47As heterojunction bipolar transistors

(1) Noor Mohammad, S a

a School of Engineering (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; ELECTRIC RESISTANCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

EMITTER-BASE JUNCTION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036604569 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/S0038-1101(01)00341-0 Document Type: Article

Times cited : (3)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.