Asymmetric InGaAs/InP MOSFETs with source/drain engineering

IEEE Electron Device Letters

Volumn 35, Issue 5, 2014, Pages 515-517

  Mo, Jiongjiong ^a   Lind, Erik ^a   Wernersson, Lars Erik ^a  

^a LUND UNIVERSITY   (Sweden)

Author keywords

InGaAs MOSFET; oscillation frequency.; source drain engineering; voltage gain

Indexed keywords

GAIN MEASUREMENT; GALLIUM;

BANDGAP MATERIALS; DEVICE SATURATION; DRAIN ELECTRODES; INGAAS MOSFET; OSCILLATION FREQUENCY; OUTPUT CONDUCTANCE; SOURCE/DRAIN ENGINEERING; VOLTAGE GAIN;

MOSFET DEVICES;

EID: 84899725361     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2014.2308925     Document Type: Article

References (14)

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