Atomic layer deposition of insulating nitride interfacial layers for germanium metal oxide semiconductor field effect transistors with high- κ oxide/tungsten nitride gate stacks

Applied Physics Letters

Volumn 90, Issue 21, 2007, Pages

  Kim, Kyoung H ^a   Gordon, Roy G ^b   Ritenour, Andrew ^c   Antoniadis, Dimitri A ^c  

^a HARVARD UNIVERSITY   (United States)

^b HARVARD UNIVERSITY   (United States)

^c USA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACIAL LAYERS; MIDGAP DENSITY; SEMICONDUCTOR FIELD EFFECT TRANSISTORS; VOLTAGE SHIFTS;

ATOMIC LAYER DEPOSITION; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; NITRIDES; PASSIVATION; THICKNESS MEASUREMENT;

SEMICONDUCTING GERMANIUM COMPOUNDS;

EID: 34249719006     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2741609     Document Type: Article

References (19)

1. J. Robertson, Rep. Prog. Phys. 69, 327 (2006).
2. H. Shang, M. M. Frank, E. P. Gusev, J. O. Chu, S. W. Bedell, K. W. Guarini, and M. Ieong, IBM J. Res. Dev. 50, 377 (2006).
3. C. O. Chui, F. Ito, and K. C. Saraswat, IEEE Electron Device Lett. 25, 613 (2004).
4. C. O. Chui, H. Kim, P. McIntyre, and K. C. Saraswat, IEEE Electron Device Lett. 25, 274 (2004).
5. W. P. Bai, N. Lu, J. Liu, A. Ramirez, D. L. Kwong, D. Wristers, A. Ritenour, S. Yu, L. Lee, and D. A. Antoniadis, Proceedings of the 2003 Symposiums on VLSI Technology, 2003, pp. 121-122.
6. S. J. Whang, S. J. Lee, F. Gao, N. Wu, C. X. Zhu, J. Pan, L. J. Tang, and D. L. Kwong, Tech. Dig. - Int. Electron Devices Meet. 2004, 307.
7. N. Wu, Q. Zhang, C. Zhu, C. Yeo, S. J. Whang, D. S. H. Chan, M. F. Li, A. Chin, D. L. Kwong, A. Y. Du, C. H. Tung, and N. Balasubramanian, Appl. Phys. Lett. 85, 4127 (2004).
8. J. S. Becker, E. Kim, and R. G. Gordon, Chem. Mater. 16, 3497 (2004).
9. D. M. Hausmann and R. G. Gordon, J. Cryst. Growth 249, 251 (2003).
10. K. H. Kim, P. de Rouffignac, and R. G. Gordon, Proceedings of the AVS Fifth International Conference on Atomic Layer Deposition, San Jose, 2005 (published on a CD-ROM).
11. K. H. Kim, D. B. Farmer, J. M. Lehn, P. V. Rao, and R. G. Gordon, Appl. Phys. Lett. 89, 133512 (2006).
12. G. Apostolopoulos, G. Vellianitis, A. Dimoulas, J. C. Hooker, and T. Conard, Appl. Phys. Lett. 84, 260 (2004).
13. R. Castagń and A. Vapaille, Surf. Sci. 28, 157 (1971).
14. E. H. Nicollian and A. Goetzberger, Bell Syst. Tech. J. 46, 1055 (1967).
15. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981), p. 447.
16. C. O. Chui, F. Ito, and K. C. Saraswat, IEEE Trans. Electron Devices 53, 1501 (2006).
17. J.-P. Han, E. M. Vogel, E. P. Gusev, C. D'Emic, C. A. Richter, D. W. Heh, and J. S. Suehle, IEEE Electron Device Lett. 25, 126 (2004).
18. B. Onsia, T. Conard, S. De Gendt, M. Heyns, I. Hoflijk, P. Mertens, M. Meuris, G. Raskin, S. Sioncke, I. Teerlinck, A. Theuwis, J. Van Steenbergen, and C. Vinkier, Solid State Phenom. 103-104, 27 (2005).
19. M. M. Frank, S. J. Koester, M. Copel, J. A. Ott, V. K. Paruchuri, and H. Shang, Appl. Phys. Lett. 89, 112905 (2006).