Self-aligned n -channel metal-oxide-semiconductor field effect transistor on high-indium-content In0.53Ga0.47 As and InP using physical vapor deposition HfO2 and silicon interface passivation layer

Applied Physics Letters

Volumn 92, Issue 20, 2008, Pages

  Ok, Injo ^a   Kim, H ^a   Zhang, M ^a   Zhu, F ^a   Park, S ^a   Yum, J ^a   Zhao, H ^a   Garcia, Domingo ^b   Majhi, Prashant ^b   Goel, N ^c   Tsai, W ^c   Gaspe, C K ^d   Santos, M B ^d   Lee, Jack C ^d  

^a The University of Texas at Austin   (United States)

^b SEMATECH   (United States)

^c INTEL CORPORATION   (United States)

^d UNIVERSITY OF OKLAHOMA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CAPACITORS; INDIUM COMPOUNDS; PASSIVATION; PHYSICAL VAPOR DEPOSITION; VOLTAGE MEASUREMENT;

CAPACITANCE-VOLTAGE (C-V) CHARACTERISTICS; FREQUENCY DISPERSION; OXIDE THICKNESS; SILICON INTERFACE PASSIVATION LAYERS;

MOSFET DEVICES;

EID: 44349146000     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2920438     Document Type: Article

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