30-nm-gate InP-based lattice-matched high electron mobility transistors with 350 GHz cutoff frequency

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 2 B, 1999, Pages

  Suemitsu, Tetsuya ^a   Ishiii, Tetsuyoshi ^a   Yokoyama, Haruki ^a   Enoki, Takatomo ^a   Ishii, Yasunobu ^a   Tamamura, Toshiaki ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; ELECTRON BEAM LITHOGRAPHY; FULLERENES; GATES (TRANSISTOR); SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

CUTOFF FREQUENCY; GATE LENGTH; INDIUM ALUMINUM ARSENIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032680212     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.38.L154     Document Type: Article

References (12)