A 246 GHz hetero-integrated frequency source in InP-on-BiCMOS technology

IEEE Microwave and Wireless Components Letters

Volumn 24, Issue 7, 2014, Pages 469-471

  Hossain, Maruf ^a   Kraemer, T ^a   Ostermay, I ^a   Jensen, T ^a,b   Janke, B ^a   Borokhovych, Y ^c,d   Lisker, M ^c   Glisic, S ^c,e   Elkhouly, M ^c   Borngraeber, J ^c   Tillack, B ^c   Meliani, C ^c   Krueger, O ^a   Krozer, V ^a   Heinrich, W ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^b TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

^c INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS   (Germany)

^d TES Electronic Solutions Germany   (Germany)

^e SILICON RADAR GMBH   (Germany)

Author keywords

Frequency multipliers; frequency tripler; hetero integration; InP DHBT; SiGe BiCMOS; transferred substrate (TS); voltage controlled oscillator (VCO)

Indexed keywords

BICMOS TECHNOLOGY; CIRCUIT OSCILLATIONS; FREQUENCY TRIPLERS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; VARIABLE FREQUENCY OSCILLATORS; WAFER BONDING;

FREQUENCY MULTIPLIER; HETERO-INTEGRATION; INP-DHBT; SIGE-BICMOS; TRANSFERRED-SUBSTRATE (TS);

SEMICONDUCTING SILICON;

EID: 84903373591     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2014.2316220     Document Type: Article

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