High performance submicron inversion-type enhancement-mode InGaAs MOSFETs with ALD Al2O3, HfO2 and HfAlO as gate dielectrics

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 637-640

  Xuan, Y ^a   Wu, Y Q ^a   Shen, T ^a   Yang, T ^a   Ye, P D ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENHANCEMENT MODES; MOSFETS; N -CHANNEL; SUB MICRONS;

ELECTRON DEVICES;

EID: 50249144058     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4419020     Document Type: Conference Paper

References (11)

1. F. Ren et al., IEEE Electron Device Lett., vol. 19, pp. 309-311, Aug. 1998.
2. K. Rajagopalan et al., IEEE Electron Device Lett., vol. 27, 959-961, 2006.
3. P.D. Ye et al., IEEE Electron Device Lett., vol. 24, pp. 211 -213, Apr.2003.
4. I. Ok et al., in IEDM Tech. Dig., pp. 829-832, Dec. 2006.
5. F. Gao et al., in IEDM Tech. Dig., pp. 833-836, Dec. 2006.
6. Y. Sun et al., IEEE Electron Device Lett., vol. 28, pp. 473-475, June 2007.
7. Y. Xuan et al., Appl. Phys. Lett., vol. 88, pp. 263518-520, June 2006.
8. Y. Xuan et al., IEEE Electron Device Lett., to be published.
9. T. Yang et al., Appl. Phys. Lett.,to be published.
10. Y. Xuan et al., IEEE Trans. Electron Dev., vol. 54, pp. 1811-1817, 2007.
11. W.J. Zhu et al., IEEE Trans. Electron Devices, vol. 51,98-105, Jan. 2004.