Investigation of carbon-doped base materials grown by CBE for Al-free InP HBTs

Journal of Crystal Growth

Volumn 209, Issue 2-3, 2000, Pages 476-480

  Benchimol, J L ^a   Mba, J ^b   Sermage, B ^b   Riet, M ^a   Blayac, S ^a   Berdaguer, P ^a   Duchenois, A M ^a   Andre P ^a   Thuret, J ^a   Gonzalez, C ^a   Konczykowska, A ^a  

^a OPTO+   (France)

^b ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BERYLLIUM; CARBON; CHEMICAL BEAM EPITAXY; DIGITAL CIRCUITS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING;

AUGER RECOMBINATION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0034141046     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00601-6     Document Type: Article

References (22)

1. Driad R., Alexandre F., Benchimol J.L., Jusserand B., Sermage B., Juhel M., Launay P. J. Cryst. Growth. 158:1996;210.
2. Stockman S.A., Hanson A.W., Colomb C.M., Fresina M.T., Baker J.E., Stillman G.E. J. Electron. Mater. 23:1994;791.
3. Benchimol J.L., Alexandre F., Lamare B., Legay P. Prog. Cryst. Growth Charact. 33:1996;473.
4. Benchimol J.L., Alexandre F., Dubon-Chevallier C., Héliot F., Bourguiga R., Dangla J., Sermage B. Electron. Lett. 28:1992;1344.
5. T. Takahashi, S. Sasa, A. Kawano, T. Iwai, T. Fujii, IEEE IEDM (1994) 191.
6. Abernathy C.R., Ren F. Mater. Sci. Eng. B. 28:1994;232.
7. Oka T., Tanoue T., Masuda H., Ouchi K., Mozume T. Electron. Lett. 31:1995;2044.
8. Benchimol J.L., Mba J., Duchenois A.M., Sermage B., Launay P., Caffin D., Meghelli M., Juhel M. J. Cryst. Growth. 188:1998;349.
9. Song J.I., Hong B.W.P., Palmstrom C.J., Hayes J.R., Chough K.B., Van der Gaag B.P. Electron. Lett. 29:1993;1893.
10. M. Ohkobo, J. Osabe, N. Ikeda, T. Ninomiya, Proceedings of the Ninth International Conference on InP and Related Materials, 1997, p. 641.
11. Ritter D., Hamm R.A., Feygenson A., Smith P.R. Appl. Phys. Lett. 64:1994;2988.
12. Gee R.C., Lin C.L., Farley C.W., Seabury C.W., Higgins J.A., Kirchner P.D., Woodall J.M., Asbeck P.M. Electron. Lett. 29:1993;850.
13. Ito H., Yamahata S., Shigekawa N., Kurishima K., Matsuoka Y. Electron. Lett. 31:1995;2128.
14. B. Sermage, J.L. Benchimol, J.C. Michel, F. Alexandre, P. Launay, D. Caffin, Proceedings of the Eighth International Conference on InP and Related Materials, 1996, p. 572.
15. C. Chelli, D. Cui, S.M. Hubbard, A. Eisenbach, D. Pavlidis, S.K. Krawczyk, B. Sermage, Proceedings of the 11th International Conference on InP and Related Materials, 1999, p. 127.
16. Ahrenkiel R.K., Ellingson R., Johnston S., Wanlass M. Appl. Phys. Lett. 72:1998;3470.
17. Cohen G.M., Benchimol J.L., Le Roux G., Legay P., Sapriel J. Appl. Phys. Lett. 68:1996;3793.
18. B. Sermage, J.L. Benchimol, G.M. Cohen, Proceedings of the Tenth International Conference on InP and Related Materials, 1998, p. 758.
19. Kurishima K., Nakajima H., Yamahata S., Kobayashi T., Matsuoka Y. Jpn. J. Appl. Phys. 34:1995;1221.
20. J.L. Benchimol, J. Mba, A.M. Duchenois, P. Berdaguer, B. Sermage, G. Le Roux, S. Blayac, M. Riet, J. Thuret, C. Gonzalez, P. André, Proceedings of the 11th International Conference on InP and Related Materials, 1999, p. 559.
21. P. André, N. Kauffmann, P. Desrousseaux, M. Riet, A. Konczykowska, J. Godin, Bipolar/BiCMOS Circuits and Technology Meeting, Minneapolis, September 1999.
22. J. Thuret, C. Gonzalez, J.L. Benchimol, M. Riet, P. Berdaguer, Proceedings of the 11th International Conference on InP and Related Materials, 1999, p. 389.