Activation energies for Te and Be in metamorphically grown AlSb and In xAl 1-x Sb layers

Applied Physics Letters

Volumn 87, Issue 9, 2005, Pages

  Hill, P ^a   Weisse Bernstein, N ^a   Dawson, L R ^a   Dowd, P ^a   Krishna, S ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FORWARD SERIES RESISTANCE; HALL MEASUREMENTS; SOLID-SOURCE MOLECULAR BEAM EPITAXY; TURN-ON VOLTAGE;

ALUMINUM COMPOUNDS; BERYLLIUM; CARRIER CONCENTRATION; GROWTH (MATERIALS); HALL EFFECT; INDIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; TELLURIUM;

ACTIVATION ENERGY;

EID: 24644447994     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2032591     Document Type: Article

References (12)

1. E. A. Pease, L. R. Dawson, L. G. Vaughn, P. Rotella, and L. F. Lester, J. Appl. Phys. 93, 3177 (2003).
2. H. Lee, P. K. York, R. J. Menna, R. U. Martinelli, D. Z. Garbuzov, S. Y. Narayan, and J. C. Connolly, Appl. Phys. Lett. 66, 1942 (1995).
3. M. Grau, C. Lin, and M. C. Amann, IEEE Photonics Technol. Lett. 16, 383 (2004).
4. D. Z. Garbuzov, R. U. Martinelli, R. J. Menna, P. K. York, H. Lee, and S. Y. Narayan, Appl. Phys. Lett. 67, 1346 (1995).
5. J. G. Kim, L. Shterengas, R. U. Martinelli, G. L. Belenky, D. Z. Garbuzov, and W. K. Chan, Appl. Phys. Lett. 81, 3146 (2002).
6. A. Salhi, Y. Rouillard, A. Perona, P. Grech, M. Garcia, and C. Sirtori, Semicond. Sci. Technol. 19, 260 (2004).
7. E. A. Pease, Ph.D. dissertation, University of New Mexico, 2003.
8. R. Venkatasubramanian, D. L. Dorsey, and K. Mahalingam, J. Cryst. Growth 175, 224 (1997).
9. http:www.ioffe.ruSVANSMSemicondInSbbandstr.html
10. E. F. Schubert and K. Ploog, Phys. Rev. B 30, 7021 (1984).
11. N. Chand, T. Henderson, J. Klem, W. T. Masselink, R. Fischer, Y.-C. Chang, and H. Morko̧, Phys. Rev. B 30, 4481 (1984).
12. J. G. Cederberg and R. M. Biefeld, Semicond. Sci. Technol. 19, 953 (2004).