Millimeter-wave hetero-integrated sources in InP-on-BiCMOS technology

International Journal of Microwave and Wireless Technologies

Volumn 6, Issue 3-4, 2014, Pages 225-233

  Jensen, Thomas ^a   Al Sawaf, Thualfiqar ^a   Lisker, Marco ^b   Glisic, Srdjan ^b   Elkhouly, Mohamed ^b   Kraemer, Tomas ^a   Ostermay, Ina ^a   Meliani, Chafik ^b   Tillack, Bernd ^b   Krozer, Viktor ^a,c   Krueger, Olaf ^a   Heinrich, Wolfgang ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^b IHP   (Germany)

^c GOETHE UNIVERSITY   (Germany)

Author keywords

New and emerging technologies and materials; technologies and devices (III V, nano, quantum, opto)

Indexed keywords

BICMOS TECHNOLOGY; MILLIMETER WAVES; OSCILLISTORS; SILICON WAFERS; SUBSTRATES; TECHNOLOGY; VARIABLE FREQUENCY OSCILLATORS; WAFER BONDING;

CARRIER SUBSTRATE; CONVERSION GAIN; EMERGING TECHNOLOGIES; FUNDAMENTAL FREQUENCIES; MILLIMETER-WAVE (MM-WAVE); SATURATED OUTPUT POWER; SEMICONDUCTOR TECHNOLOGY; VOLTAGE-CONTROLLED-OSCILLATOR; INP; INTEGRATED SOURCES;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 84901978920     PISSN: 17590787     EISSN: 17590795     Source Type: Journal    
DOI: 10.1017/S1759078714000579     Document Type: Article

References (14)

1. Raman, S.; Chang, T.H.; Dohrman, C.L.; Rosker, M.J.: The DARPA COSMOS program: The convergence of InP and silicon CMOS technologies for high-performance mixed-signal, in Int. Conf. Indium Phosphide and Related Materials (IPRM), 2010
2. Kazior, T.E. et al.: A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates, in IEEE Microw. Symp. Technology Digest, 2009, 1113-1116
3. Hoke, W.E. et al.: Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit. J. Vac. Sci. Technol. B, 30 (2) (2012), 02B101-1-6
4. Nicolson, S.T. et al.: A low-voltage SiGe BiCMOS 77-GHz automotive radar chipset, microwave theory and techniques. IEEE Transact. 56 (5) Part: 1, (2008), 1092-1104. (Pubitemid 351709507
5. Sarkas, I.; Nicolson, S.T.; Tomkins, A.; Laskin, E.; Chevalier, P.; Sautreuil, B.; Voinigescu, S.P.: An 18-Gb/s, direct QPSK modulation SiGe BiCMOS transceiver for last mile links in the 70-80 GHz band. IEEE Journal Solid-State Circuits 45 (10), 1968-1980
6. Sano, K.; Fukuyama, H.; Nakamura, M.; Mutoh, M.; Nosaka, H.; Murata, K.: Wide dynamic range transimpedance amplifier IC for 100-G DP-QPSK optical links using 1-mm InP HBTs. IEICE Electron. Express, 9 (12) (2012), 1012-1017
7. Kozhuharov, R.; Bao, M.; Gavell, M.; Zirath, H.: A W- And G-band MMIC source using InP HBT technology, in Int. Microwave Symp., 2012
8. Takahashi, H.; Hirata, A.; Takeuchi, J.; Kukutsu, N.; Kosugi, T.; Murata, K.: 120-GHz-band 20-Gbit/s transmitter and receiver MMICs using quadrature phase shift keying, in 7th European Microwave Integrated Circuits Conf., October 2012, 313-316
9. Kraemer,T.;Rudolph,M.; Schmueckle, F.J.;Wuerfl, J.;Traenkle,G.: InP DHBT process in transferred substrate technology with fT and fmax over 400 GHz. IEEE Trans. Electron Devices 56 (9) (2009), 1897-1903
10. Krämer, T. et al.: InP-DHBT-on-BiCMOS technology with fT/fmax of 400/350 GHz for heterogeneous integrated millimeter-wave sources. IEEE Trans. Electron Devices, 60 (2013), 2209
11. Ostermay, I. et al.: Three-dimensional InP DHBT on SiGe BiCMOS integration by means of benzocyclobutene based wafer bonding for MM-wave circuits, Microelectron. Eng. (2013), http://dx.doi.org/10. 1016/j.mee.2013.11. 012, to be published
12. Ostermay, I. et al.: 200 GHz interconnects for InP-on-BiCMOS integration, in Int. Microwave Symp., 2013
13. Jensen, T. et al.: A 164 GHz hetero-integrated source in InP-on-BiCMOS technology, in Proc. EuMIC, European Microwave Integrated CIRCUITS Conf., 2013
14. Krozer, V. et al.: "InP on BiCMOS technology platform for millimeter-wave and THz MMIC" 2013 6th Millimeter Waves and THz Technology Workshop (UCMMT), UK, Europe, China; Publication Year: 2013, 1-2.