Reduction of leakage current in In0.53Ga0.47As channel metal-oxide-semiconductor field-effect-transistors using AlAs 0.56Sb0.44 confinement layers

Applied Physics Letters

Volumn 103, Issue 20, 2013, Pages

  Huang, Cheng Ying ^a   Lee, Sanghoon ^a   Cohen Elias, Doron ^a   Law, Jeremy J M ^a   Carter, Andrew D ^a   Chobpattana, Varistha ^a   Stemmer, Susanne ^a   Gossard, Arthur C ^a   Rodwell, Mark J W ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BAND OFFSET; DC CHARACTERISTICS; ELECTRON CONFINEMENT; GATE LENGTH; HETERO INTERFACES; METAL OXIDE SEMICONDUCTOR; PEAK TRANSCONDUCTANCE; SUB-THRESHOLD SWING(SS);

ALUMINUM; GALLIUM; INDIUM; THERMIONIC EMISSION;

MOSFET DEVICES;

EID: 84889646517     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4831683     Document Type: Article

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