Metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by MOCVD

IEEE Electron Device Letters

Volumn 29, Issue 6, 2008, Pages 561-564

  Li, Haiou ^a   Tang, Chak Wah ^a   Lau, Kei May ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

AlInAs GaInAs; GaAs substrate; Low temperature (LT) buffer; Metamorphic; Metamorphic high electron mobility transistors (mHEMTs)

Indexed keywords

CARRIER CONCENTRATION; HALL MOBILITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES;

METAMORPHIC HIGH-ELECTRON MOBILITY TRANSISTORS; MULTISTAGE BUFFERING SCHEME;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 44849113079     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.922728     Document Type: Article

References (10)

1. 0.47As metamorphic GaAs HEMTs with an ultrahigh fmax of 520 GHz," IEEE Electron Device Lett., vol 28, no. 8, pp. 672-675, Aug. 2007.
2. W. E. Hoke, T. D. Kennedya, A. Torabia, C. S. Whelana, P. F. Marsha, R. E. Leoni, C. Xu, and K. C. Hsieh, "High indium metamorphic HEMT on a GaAs substrate," J. Cryst. Growth, vol. 251, no. 1, pp. 827-831, Apr. 2003.
3. M. Washima, T. Tanaka, and T. Hashimoto, "MOVPE grown metamorphic HEMT epitaxial wafers," Hitachi Cable Rev., no. 20, pp. 39-44, Aug. 2001.
4. 4-doped semi-insulating InP as a butter layer in GaInAs/InP high electron mobility transistor," Appl. Phys. Lett., vol. 69, no. 8, pp. 1143-1144, Aug. 1996.
5. C.-W. Tang, J. Li, K. M. Lau, and K. J. Chen, "MOCVD) grown Metamorphic InAlAs/InGaAs HEMTs on GaAs substrates," in Proc. Compound Semicond. Manuf. Technol., Apr. 24-27, 2006, pp. 243-245.
6. 4 plasma treatment," presented at the Int. Conf. Compound Semiconductor Manufacturing Technol., Hilton Austin, TX, 2007.
7. 4-doped semi-insulating InP," Appl. Phys. Lett., vol. 67, no. 20, pp. 3004-3006, Nov. 1995.
8. N. Pan, J. Elliott, H. Hendriks, L. Aucoin, P. Fay, and I. Adesida, "InAlAs/InGaAS high electron mobility transistors on low temperature InAlAs buffer layers by metalorganic chemical vapor deposition," Appl. Phys. Lett., vol. 66, no. 2, pp. 212-214, 1995.
9. Y. J. Chan, D. Pavlidis, G. I. Ng, M. Jaffe, J. Singh, and M. Quillec, "Effect of channel strain on the electrical characteristics of InGaAs/InAlAs HEMTs," in IEDM Tech. Dig., 1987, vol. 33, pp. 427-430.
10. 0.5As metamorphic HEMT," IEEE Trans. Electron Devices, vol. 53, no. 3, pp. 406-412, Mar. 2006.