InGaAs/InP DHBTs with 120-nm collector having simultaneously high fτ, fmax ≥ 450 GHz

IEEE Electron Device Letters

Volumn 26, Issue 8, 2005, Pages 530-532

  Griffith, Zach ^a   Rodwell, Mark J W ^a   Fang, Xiao Ming ^b   Loubychev, Dmitri ^b   Wu, Ying ^b   Fastenau, Joel M ^b   Liu, Amy W K ^b  

^a University of California at Santa Barbara   (United States)

^b IQE INC   (United States)

Author keywords

Heterojunction bipolar transistor (HBT); Indium phosphide (InP)

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SUPERLATTICES;

BASE-COLLECTOR CAPACITANCE; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 23844444783     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.852519     Document Type: Article

References (14)

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