Ga2O3(Gd2O3)/InGaAs enhancement-mode n-channel MOSFET's

IEEE Electron Device Letters

Volumn 19, Issue 8, 1998, Pages 309-311

  Ren, F ^a,b   Kuo, J M ^a   Hong, M ^a   Hobson, W S ^a   Lothian, J R ^a   Lin, J ^a   Tsai, H S ^a   Mannaerts, J P ^a   Kwo, J ^a   Chu, S N G ^a   Chen, Y K ^a   Cho, A Y ^a  

^a LUCENT TECHNOLOGIES   (United States)

^b University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODEPOSITION; ELECTRON BEAMS; GATES (TRANSISTOR); MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SINGLE CRYSTALS; SUBSTRATES; TRANSCONDUCTANCE;

GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE);

MOSFET DEVICES;

EID: 0032142397     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.704409     Document Type: Article

References (12)

1. 0.47As n-channel native oxide inversion mode field-effect transistor," Appl. Phys. Lett., vol. 41, pp. 280-281, 1982.
2. 0.53As field-effect transistors," IEEE Electron Device Lett., vol. EDL-2, pp. 73-75, 1981.
3. C. Watanabe, S. Kinoshita, K. Furuya, and Y. Miyamoto, "GaInAs/InP MOSFET by organometallic vapor phase epitaxy and water oxidation techniques," Trans. IECE Jpn., 1986, vol. E69, pp. 779-781.
4. J. Splettstößer, F. Schulte, A. Trasser, D. Schmitz, and H. Beneking, "High speed MISFET's grown by metal organic vapor phase epitaxy," in 19th Europ. Solid State Dev. Res. Conf., Berlin, Germany, 1989, pp. 267-270.
5. 0.47As depletion-mode metal-insulator-semiconductor field-effect transistors with improved stability," Appl. Phys. Lett., vol. 62, pp. 3291-3293, 1993.
6. 2-GaInAs metal/insulator/semiconductor interface," Thin Solid Films, vol. 117, pp. 173-190, 1984.
7. F. Schulte, C. Werres, J. Splettstößer, D. Schmitz, R. Tuzinski, K. Heime, and H. Beneking, "Analog and digital performance of MISFET's on p- and n-GaInAs," 4th Intern. Conf. InP Rel. Mat., 1992, pp. 503-506.
8. L. C. Upadhyayula, P. D. Gardner, S. G. Liu, and S. Y. Narayan, "Inversion-mode GaInAs MISFET ring oscillators," IEEE Electron Device Lett., vol. EDL-7, pp. 390-392, 1986.
9. M. Hong, M. Passlack, J. P. Mannaerts, J. Kwo, S. N. G. Chu, N. Moriya, S. Y. Hou, and V. J. Fratello, "Low interface state density oxide-GaAs structures fabricated by in-situ molecular beam epitaxy," J. Vac. Sci Technol, vol. B14, pp. 2297-2300, 1996.
10. 3-GaAs interfaces: Fabrication, characterization, and modeling," IEEE Trans. Electron Deices., vol. 44, pp. 214-225, 1997.
11. F. Ren, M. Hong, W. S. Hobson, J. M. Kuo, J. R. Lothian, J. P. Mannaerts, J. Kwo, S. N. G. Chu, Y. K. Chen, and A. Y. Cho, "Demonstration of enhancement-mode p- and n-channel GaAs MOSFET's with as gate oxide," Solid State Electron., vol. 41, p. 1751, 1997.
12. 3)," J. Electrochem. Soc., vol. 144, pp. L239-241, 1997.