Self-aligned inversion-channel and D-mode InGaAs MOSFET using Al 2O3/Ga2O3(Gd2O3) as gate dielectrics

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2008, Pages 39-40

  Lin, T D ^a   Chen, C P ^a   Chiu, H C ^a   Chang, P ^a   Lin, C A ^a   Hong, M ^a   Kwo, J ^a   Tsai, W ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 58249102651     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2008.4800726     Document Type: Conference Paper

References (3)

1. F. Ren, et al., IEDM 1996, p.943; Solid-State Electron. 41, 1751 (1997)
2. F. Ren, et al., IEEE Electron Device Lett., V. 19, No. 8, p. 309 (1998)
3. Y. Xuan, et al., Appl. Phys. Lett. 91, 232107 (2007)