200-nm InGaAs/InP type I DHBT employing a dual-sidewall emitter process demonstrating fmax > 800 GHz and fτ = 360 ghz

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2009, Pages 16-19

  Lobisser, Evan ^a   Griffith, Zach ^b   Jain, Vibhor ^a   Thibeault, Brian J ^a   Rodwell, Mark J W ^a   Loubychev, Dmitri ^c   Snyder, Andrew ^c   Wu, Ying ^c   Fastenau, Joel M ^c   Liu, Amy W K ^c  

^a University of California   (United States)

^b ROCKWELL SCIENTIFIC COMPANY   (United States)

^c IQE INC   (United States)

Author keywords

InP heterojunction bipolar transistor

Indexed keywords

CURRENT GAINS; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS; DRY AND WET; EMITTER JUNCTIONS; INGAAS/INP; INP HETEROJUNCTION BIPOLAR TRANSISTOR; MESA STRUCTURE; SPREADING RESISTANCE;

BICMOS TECHNOLOGY; BIPOLAR TRANSISTORS; HETEROJUNCTIONS; INDIUM; INDIUM PHOSPHIDE; REFRACTORY METALS; SILICON NITRIDE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 70349509930     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2009.5012408     Document Type: Conference Paper

References (5)

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