THz MMICs based on InP HBT technology

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2010, Pages 1126-1129

  Hacker, Jonathan ^a   Seo, Munkyo ^a   Young, Adam ^a   Griffith, Zach ^a   Urteaga, Miguel ^a   Reed, Thomas ^b   Rodwell, Mark ^b  

^a TELEDYNE SCIENTIFIC COMPANY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Indium phosphide (lnP) DHBT bipolar transistor; Submillimeter wave; Terahertz; TMIC

Indexed keywords

ANALOG BLOCKS; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS; DOUBLE-BALANCED; DRIVER AMPLIFIER; DYNAMIC FREQUENCY DIVIDER; GILBERT CELL MIXERS; HETERODYNE RECEIVERS; HIGH BANDWIDTH; HIGH BREAKDOWN VOLTAGE; HIGH-DENSITY; INP; INP-DHBT; INP-HBT; INTERCONNECT SYSTEMS; LOW LOSS; LOW NOISE; METAL LAYER; SINGLE-CHIP; TERAHERTZ; THICK LAYERS; TMIC; TUNING NETWORKS; VOLTAGE CONTROLLED OSCILLATOR;

BIPOLAR TRANSISTORS; CIRCUIT OSCILLATIONS; HETEROJUNCTIONS; INDIUM; INDIUM PHOSPHIDE; LOW NOISE AMPLIFIERS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SUBMILLIMETER WAVES; TERAHERTZ WAVES; VARIABLE FREQUENCY OSCILLATORS; VOLTAGE DIVIDERS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 77957759269     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2010.5517225     Document Type: Conference Paper

References (8)

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