30-nm two-step recess gate InP-based InAlAs/InGaAs HEMTs

IEEE Transactions on Electron Devices

Volumn 49, Issue 10, 2002, Pages 1694-1700

  Suemitsu, Tetsuya ^a,b,c   Yokoyama, Haruki ^b   Ishii, Tetsuyoshi ^b   Enoki, Takatomo ^a,b   Meneghesso, Gaudenzio ^a,d   Zanoni, Enrico ^a,d  

^a IEEE   (United States)

^b NTT CORPORATION   (Japan)

^c MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^d UNIVERSITY OF PADOVA   (Italy)

Author keywords

High speed circuits devices; Millimeter wave FETs; MODFETs; Semiconductor device fabrication; Semiconductor heterojunctions

Indexed keywords

INDIUM ALUMINUM ARSENIDE; METALLURGICAL GATE LENGTH; MILLIMETER WAVE FIELD EFFECT TRANSISTOR; SEMICONDUCTOR HETEROJUNCTION; SHORT CHANNEL EFFECT;

ELECTRIC CONDUCTANCE; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); HETEROJUNCTIONS; LEAKAGE CURRENTS; MILLIMETER WAVE DEVICES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0036772477     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.803646     Document Type: Article

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