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Volumn , Issue , 2007, Pages 403-406
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Sub-300 nm InGaAs/InP Type-I DHBTs with a 150 nm collector, 30 nm base demonstrating 755 GHz fmax and 416 GHz fτ
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Author keywords
InP heterojunction bipolar transistor
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Indexed keywords
HEAT RESISTANCE;
HEAT TRANSFER;
LITHOGRAPHY;
SUPERLATTICES;
BASE SPREADING RESISTANCE;
DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS (DHBT);
EMITTER JUNCTIONS;
HETEROJUNCTION BIPOLAR TRANSISTORS;
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EID: 34748857401
PISSN: 10928669
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/ICIPRM.2007.381209 Document Type: Conference Paper |
Times cited : (51)
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References (14)
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