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Volumn , Issue , 2007, Pages 403-406

Sub-300 nm InGaAs/InP Type-I DHBTs with a 150 nm collector, 30 nm base demonstrating 755 GHz fmax and 416 GHz fτ

Author keywords

InP heterojunction bipolar transistor

Indexed keywords

HEAT RESISTANCE; HEAT TRANSFER; LITHOGRAPHY; SUPERLATTICES;

EID: 34748857401     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2007.381209     Document Type: Conference Paper
Times cited : (51)

References (14)
  • 7
    • 34748867276 scopus 로고    scopus 로고
    • Penn State University
    • Device Research Conference, June 26-28
    • E. Lind et al., Device Research Conference, Penn State University, Late News, June 26-28, 2006.
    • (2006) Late News
    • Lind, E.1
  • 8
    • 34748848776 scopus 로고    scopus 로고
    • Bandprof, Semiconductor Device Simulation Tool, Prof. W. Frensley, University of Texas, Dallas
    • Bandprof, Semiconductor Device Simulation Tool, Prof. W. Frensley, University of Texas, Dallas.
  • 12
    • 34748914720 scopus 로고    scopus 로고
    • Private communication, UCSB, Nov
    • E. Lind, Private communication, UCSB, Nov. 2006.
    • (2006)
    • Lind, E.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.