480-GHz f max in InP/GaAsSb/InP DHBT with new base isolation μ-airbridge design

IEEE Electron Device Letters

Volumn 33, Issue 10, 2012, Pages 1381-1383

  Zaknoune, M ^a   Mairiaux, E ^a   Roelens, Y ^a   Waldhoff, N ^a   Rouchy, U ^b   Frijlink, P ^b   Rocchi, M ^b   Maher, H ^b  

^a INSTITUT D ELECTRONIQUE   (France)

^b OMMIC   (France)

Author keywords

Double heterojunction bipolar transistor (DHBT); GaAsSb InP; high f max; MOCVD

Indexed keywords

AIR-BRIDGES; BASE ISOLATION; BASE-COLLECTOR CAPACITANCE; COMMON-EMITTER CURRENT GAIN; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS; GAASSB/INP; HIGH F MAX; INP; MOCVD; SELF-ALIGNED;

EID: 84866917133     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2210187     Document Type: Article

References (11)

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