InGaAs-InP mesa DHBTs with simultaneously high fτ and fmax and low Ccb/Ic ratio

IEEE Electron Device Letters

Volumn 25, Issue 5, 2004, Pages 250-252

  Griffith, Z ^a   Dahlstrom M ^a   Urteaga, M ^a,b   Rodwell, M J W ^a   Fang, X M ^c   Lubyshev, D ^c   Wu, Y ^c   Fastenau, J M ^c   Liu, W K ^c  

^a University of California   (United States)

^b ROCKWELL SCIENTIFIC COMPANY   (United States)

^c IQE INC   (United States)

Author keywords

Heterojunction bipolar transistor (HBT)

Indexed keywords

CAPACITANCE; CARBON; ELECTRON DEVICE MANUFACTURE; NUMERICAL METHODS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SUPERLATTICES; THERMAL EFFECTS; THICKNESS MEASUREMENT;

BASE COLLECTOR CAPACITANCE; COLLECTOR THICKNESS; CONVENTIONAL TRIPLE MESA STRUCTURE; INDIUM GALLIUM ARSENIDE; INDIUM PHOSPHIDE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 2442424247     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.827288     Document Type: Letter

References (9)

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