Performance improvement in tensile-strained In0.5 Al0.5As/InxGa1-xAs/ In0.5Al0.5As metamorphic HEMT

IEEE Transactions on Electron Devices

Volumn 53, Issue 3, 2006, Pages 406-412

  Hsu, Wei Chou ^a   Huang, Dong Hai ^a   Lin, Yu Shyan ^b   Chen, Yeong Jia ^a   Huang, Jun Chin ^a   Wu, Chang Luen ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL DONG HWA UNIVERSITY   (Taiwan)

^c Transcom Inc   (Taiwan)

Author keywords

Metamorphic high electron mobility transistor (HEMT); Microwave; Power; Tensile strain; V shaped

Indexed keywords

ELECTRIC CURRENTS; MICROWAVES; OSCILLATIONS; POWER ELECTRONICS; THERMODYNAMIC STABILITY; TRANSCONDUCTANCE;

CURRENT DRIVING CAPABILITY; METAMORPHIC HIGH-ELECTRON MOBILITY TRANSISTOR (HEMT); OSCILLATION FREQUENCY; OUTPUT POWER; POWER GAIN; TENSILE STRAIN; UNITY-GAIN CUTOFF FREQUENCY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33244483877     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.863545     Document Type: Article

References (28)

1. C. Nguyen and M. Micovic, "The state-of-the-art of GaAs and InP power devices and amplifiers," IEEE Trans. Electron. Devices, vol. 48, no. 4, pp. 472-478, Apr. 2001.
2. L. D. Nguyen, A. S. Brown, M. A. Thompson, and L. M. Jelloian, "50 nm self-aligned gate pseudomorphic AlInAs/GaInAs high electron mobility transistors," IEEE Trans. Electron. Devices, vol. 39, no. 12, pp. 2007-2014, Dec. 1992.
3. 0.47As power metamorphic HEMT on GaAs substrate with wide head T-shaped gate," in Proc. Indium Phosphide Rel. Mater., 2002, pp. 201-204.
4. 1-xAs HEMT with an inverted delta-doped V-shaped channel structure," IEEE Electron Device Lett., vol. 20, no. 11, pp. 548-550, Nov. 1999.
5. 0.85As pseudomorphic HEMT," IEEE Electron Device Lett., vol. 20, no. 6, pp. 274-276, Jun. 1999.
6. W. C. Liu, K. H. Yu, K. W. Lin, J. H. Tsai, C. Z. Wu, K. P. Lin, and C. H. Yen, "On the InGaP/GaAs/InGaAs camel-like FET for high-breakdown, low-leakage, and high-temperature operations," IEEE Trans. Electron Devices., vol. 48, no. 8, pp. 1522-1530, Aug. 2001.
7. 0.5As/InAsP high-electron-mobility structures on GaAs substrates," Jpn. J. Appl. Phys., vol. 41, pp. 1004-1007, 2002.
8. max," in Proc. Indium Phosphide Rel. Mater., 2001, pp. 192-195.
9. 1-xP graded buffer layers," in Proc. Mater. Sci. Semicond., vol. 4, 2001, pp. 641-645.
10. 0.35As metamorphic HEMT," IEEE Electron Device Lett., vol. 26, no. 2, pp. 59-61, Feb. 2005.
11. 0.33As metamorphic HEMT modeling and measurements," IEEE Trans. Electron Devices, vol. 48, no. 6, pp. 1037-1044, Jun. 2001.
12. 1-xAs/InAlAs/InP heterostructures for high electron mobility transistor application," IEEE Trans. Electron Devices, vol. 43, no. 9, pp. 1326-1335, Sep. 1996.
13. M. Zaknoune, B. Bonte, C. Gaquiere, Y. Cordier, Y. Druelle, D. Théron, and Y. Crosnier, "InAlAs/InGaAs metamorphic HEMT with high current density and high breakdown voltage," IEEE Electron Device Lett., vol. 19, no. Sep., pp. 345-347, 1998.
14. 0.34As HEMT on GaAs substrate with high breakdown voltage," IEEE Electron Device Lett., vol. 21, no. 11, pp. 512-514, Nov. 2000.
15. S. Fujita, T. Noda, C. Nozaki, and Y. Ashizawa, "InGaAS/InAlAs HEMT with a strained InGaP Schottky contact layer," IEEE Electron Device Lett., vol. 14, no. 5, pp. 259-261, 1993.
16. N. Sugii, D. Hisamoto, K. Washio, N. Yokoyama, and S. Kimura, "Performance enhancement of strained-Si MOSFETs fabricated on a chemical-mechanical-polished SiGe substrate," IEEE Trans. Electron Devices, vol. 49, no. 12, pp. 2237-2243, Dec. 2002.
17. K. Rim, J. L. Hoyt, and J. F. Gibbons, "Fabrication and analysis of deep submicron strained-Si n-MOSFETs," IEEE Trans. Electron Devices, vol. 47, no. 7, pp. 1406-1415, Jul. 2000.
18. W. E. Hoke, P. S. Lyman, J. J. Mosca, H. T. Hendriks, and A. Torabi, "Improved pseudomorphic high electron mobility transistor structures on InGaAs substrates," J. Appl. Phys., vol. 81, no. 2, pp. 968-973, 1997.
19. G. H. Martint, A. Lepore, M. Seaford, B. Pereiaslavets, R. M. Spencer, and L. F. Eastman, "High temperature operation of AlInAs/InGaAs/AlInAs 3D-SMODFETs with record two-dimensional electron gas densities," in IEDM Tech. Dig., 1996, pp. 39-42.
20. 1-xAs channel pHEMTs on virtual substrates: a simulation study," Comput. Electron., vol. IWCE-6, pp. 178-181, 1998.
21. C. Köpf, H. Kosina, and S. Selberherr, "Physical models for strained and relaxed GaInAs alloys: Band structure and low-field transport," Solid State Electron., vol. 41, no. 8, pp. 1139-1152, 1997.
22. C. Heedt, F. Buchali, W. Prost, W. Brockerhoff, D. Fritzsche, H. Niskel, R. Losch, W. Schlapp, and F. J. Tegude, "Drastic reduction of gate leakage in InAlAs/InGaAs HEMTs using a pseudomorphic InAlAs hole barrier layer," IEEE Trans. Electron Devices, vol. 41, no. 10, pp. 1685-1690, Oct. 1994.
23. M. H. Somerville, R. Blanchard, J. A. del Alamo, K. G. Duh, and P. C. Chao, "On-state breakdown in power HEMTs: Measurements and modeling," IEEE Trans. Electron Devices, vol. 46, no. 6, pp. 1087-1093, Jun. 1999.
24. M. H. Somerville, R. Blanchard, J. A. del Alamo, K. G. Duh, and P. C. Chao, "A new gate current extraction technique for measurement of on-state breakdown voltage in HEMTs," IEEE Electron Device, Lett., vol. 19, no. 11, pp. 405-407, Nov. 1998.
25. 1-xAs high electron mobility transistors on InP. II: on-state," Jpn. J. Appl. Phys., vol. 34, pp. 1805-1808, 1995.
26. F. T. Chien, S. C. Chiol, and Y. J. Chan, "Microwave power performance comparison between single and dual doped-channel design in AlGaAs/InGaAs HFETs," IEEE Electron Device Lett., vol. 21, no. 2, pp. 60-62, Feb. 2000.
27. 0.85As (x = 0.3, 0.5, 0.7, 1.0) doped-channel HFETs," IEEE Trans. Electron Devices, vol. 51, no. 1, pp. 156-158, Jan. 2004.
28. 1-xAs metamorphic HEMTs with pseudomorphic and symmetrically graded channels," IEEE Trans. Electron Devices, vol. 52, no. 6, pp. 1079-1086, Jun. 2005.