InP-based HBT technology for next-generation lightwave communications

Microwave Journal

Volumn 41, Issue 6, 1998, Pages 22-38

  Kobayashi, K W ^a,b,c,d   Oki, A K ^a,d,e,f   Gutierrez Aitken, A ^a,g,h   Cowles, J ^a,h,i,j   Tran, L T ^a,d,f,k   Block, T R ^a,l,m   Streit, D C ^a,n,o  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

^d TRW ^*

^e UNIVERSITY OF HAWAII   (United States)

^f UNIVERSITY OF CALIFORNIA   (United States)

^g EMI University   (Bolivia)

^h UNIVERSITY OF MICHIGAN   (United States)

ⁱ UNIVERSITY OF PENNSYLVANIA   (United States)

^j GaAs and InP HBT Technologies

^k CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^l UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^m University of Pennsylvania ^*

ⁿ UNIVERSITY OF CALIFORNIA   (United States)

^o TRW's RF Products Center   (United States)

more..

Author keywords

[No Author keywords available]

Indexed keywords

DIGITAL COMMUNICATION SYSTEMS; EPITAXIAL GROWTH; INTEGRATED OPTOELECTRONICS; MOLECULAR BEAM EPITAXY; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; PHOTODETECTORS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SIGNAL RECEIVERS; TRANSMITTERS;

BIPOLAR JUNCTION TRANSISTOR; OPTOELECTRONIC RECEIVER; PHOTODETECTOR RECEIVER;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032098840     PISSN: 01926225     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (25)

1. K.W. Kobayashi, J. Cowles, L.T. Tran, T.R. Block, A.K. Oki and D.C. Streit, "A 2 to 50 GHz InAlAs/InGaAs-InP HBT Distributed Amplifier," 1996 IEEE GaAs IC Symposium Digest, Orlando, FL, pp. 207-210.
2. Y. Matsuoka and E. Sano, "High Speed AlGaAs/GaAs HBTs and Their Applications to 40 Gbit/s-class ICs," 1994 IEEE GaAs IC Symposium Digest, Philadelphia, PA, pp. 186-189.
3. T. Otsuji, E. Sano, Y. Imai and T. Enoki, "40 Gbit/s ICs for Future Lightwave Communications Systems," 1996 IEEE GaAs IC Symposium Digest, Philadelphia, PA, pp. 186-189.
4. T. Swahn, T. Lewin, M. Mokhtari, H. Tenhunen, R. Walden and W. Stanchina, "40 Gb/s, 3 V InP HBT ICs for a Fiber-optic Demonstrator System," 1996 IEEE GaAs IC Symposium Digest, Orlando, FL, pp. 125-128.
5. K.W. Kobayashi, L.T. Tran, J. Cowles, T.R. Block, A.K. Oki and D.C. Streit, "Low DC Power High Gain Bandwidth Product In-AlAs/InGaAs-InP HBT Direct-coupled Amplifiers," 1996 IEEE GaAs IC Symposium Digest, Orlando, FL, pp. 141-144.
6. M. Rodwell, J.F. Jensen, W.E. Stanchina, R.A. Metzger, D.B. Rensch, M.W. Pierce, T.V. Kargodorian and Y.K. Allen, "33 GHz Monolithic Cascode AlInAs/GaInAs Heterojunction Bipolar Transistor Feedback Amplifier," IEEE BCTM Digest, Minneapolis, MN, 1990, pp. 252-255.
7. R.K. Montgomery, D.A. Humphrey, P.R. Smith, B. Jalali, R.N. Nottenburg, R.A. Hamm and M.P. Panish, "A DC to 20 GHz High Gain Monolithic InP/InGaAs HBT Feedback Amplifier," IEEE IEDM Digest, pp. 36.5.1-36.5.4.
8. N.H. Sheng, W.J. Ho, N.L. Wang, R.L. Pierson, P.M. Asbeck and W.L. Edwards, "A 30 GHz Bandwidth AlGaAs/GaAs HBT Direct-coupled Feedback Amplifier," IEEE MGW Letters, Vol. 1, No. 8, August 1991, pp. 208-210.
9. Y. Kuriyama, J. Akagi, T. Sugiyama, S. Hongo, K. Tsuda, N. Iizuka and M. Obara, "DC to 40 GHz Broadband Amplifiers Using AlGaAs/GaAs HBTs," 1994 IEEE GaAs IC Symposium Digest, Philadelphia, PA, pp. 299-302.
10. H. Schumacher, A. Gruhle, U. Erben, H. Kibbel and U. Konig, "A 3 V Supply Voltage, DC to 18 GHz Si-Ge HBT Wideband Amplifier," 1995 IEEE BCTM Digest, Minneapolis, MN, pp. 190-193.
11. J.R. Long, M.A. Copeland, S.J. Kovacic, D.S. Malhi and D.L. Harame, "RF Analog and Digital Circuits in SiGe Technology," 1995 IEEE ISSC Conference, San Jose, CA, pp. 82-83.
12. T InP/InGaAs Double-heterojunction Bipolar Transistors with Stepgraded InGaAsP Collector," 1994 IEEE GaAs IC Symposium Digest, Philadelphia, PA, pp. 345-348.
13. max InP/InGaAs Double-heterojunction Bipolar Transistors with a New Hexagonal-shaped Emitter," 1995 IEEE GaAs IC Symposium Digest, San Diego, CA, pp. 163-166.
14. C.S. Aitchinson, "Potential of the Distributed Amplifier as a Photo Diode Detector Amplifier in High Bit Rate Optical Communication Systems," Electronics Letters, Vol. 26, No. 2, September 1990, pp. 1693-1695.
15. R.K. Montgomery, A. Feygenson, P.R. Smith, R.D. Yadvish, R.A. Hamm and H. Temkin, "A 28 GHz Transimpedance Preamplifier with Inductive Bandwidth Enhancement," IEEE IEDM, 1992, pp. 16.1.1-16.1.4.
16. M. Soda, H. Tezuka, F. Sato, T. Hashimoto, S. Nakamura, T. Tatsumi, T. Suzaki and T. Tashiro, "Si-analog ICs for 20 Gbps Optical Receiver," IEEE JSSC, Vol. 29, No. 12, December 1994, pp. 1577-1582.
17. A.L. Gutierrez-Aitken, K. Yang, X. Zhang, G.I. Haddad, P. Bhattacharya and L.M. Lunardi, "16 GHz Bandwidth InAlAs-In-GaAs Monolithically Integrated PIN/HBT Photoreceiver," IEEE Photonics Technical Letters, Vol. 7, No. 11, November 1995, pp. 1339-1341.
18. Y. Suzuki, H. Shimawaki, Y. Amamiya, K. Fukuchi, N. Nagano, H. Yano and K. Honjo, "An HBT Preamplifier for 40 Gbps Optical Transmission Systems," 1996 IEEE GaAs IC Symposium Digest, Orlando, FL, pp. 203-205.
19. K.W. Kobayashi, L.T. Tran, M.D. Lammert, A.K. Oki and D.C. Streit, "Transimpedance Bandwidth Performance of an HBT Loss-compensated Coplanar Waveguide Distributed Amplifier," 1996 IEE Electronics Letters, Vol. 32, No. 24, November 21, 1996.
20. Z. Lao, M. Berroth, V. Hurm, A. Thiede, R. Bosch, P. Hofmann, A. Hulsmann, C. Moglestue and K. Kohler, "25 Gbps AGC Amplifier, 22 GHz Transimpedance Amplifier and 27.7 GHz Limiting Amplifier ICs Using AlGaAs/GaAs HEMTs," 1997 IEEE ISSCC Digest, San Francisco, CA, pp. 356-357.
21. S. Kimura, Y. Imai, Y. Umeda and T. Enoki, "A DC to 50 GHz InAlAs/InGaAs HEMT Distributed Baseband Amplifier Using a New Loss Compensation Technique," 1996 IEEE GaAs IC Symposium Digest, Orlando, FL, pp. 96-99.
22. A.L. Gutierrez-Aitken et al., "Wide Bandwidth InAlAs/InGaAs Monolithic PINHBT Photoreceiver," Proceedings of IEEE/LEOS Summer Topical Meetings: ICs for New Age Lightwave Communications, Keystone, CO, August 1995.
23. E. Sano, M. Yoneyama, S. Yamahata and Y. Matsuoka, "23 GHz Bandwidth Monolithic Photoreceiver Compatible with InP/GaAs Double Heterojunction Bipolar Transistor Fabrication Process," Electronics Letters, Vol. 30, No. 24, November 1994, pp. 2064-2065.
24. S. van Waasen, A. Umbach, U. Auer, H.G. Bach, R.M. Bertenburg, G. Janssen, G.G. Mekonnen, W. Passenberg, R. Reuter, W. Schlaak, C. Schramm, G. Unterborsch, P. Wolfram and F.J. Tegude, "27 GHz Bandwidth High Speed Monolithic Integrated Optoelectronic Photoreceiver Consisting of a Waveguide Fed Photodiode and an In-AlAs/InGaAs-HFET-traveling-wave Amplifier," 1996 IEEE GaAs IC Symposium Digest, Orlando, FL, pp. 258-261.
25. K.W. Kobayashi, J. Cowles, L.T. Tran, A. Gutierrez-Aitken, T.R. Block, A.K. Oki and D.C. Streit, "A 50 MHz to 55 GHz Multidecade InP-based HBT Distributed Amplifier," IEEE MGW Letters, 1997.