Effects of barrier layers on device performance of high mobility In 0.7Ga0.3 As metal-oxide-semiconductor field-effect- transistors

Applied Physics Letters

Volumn 96, Issue 10, 2010, Pages

  Zhao, Han ^a   Chen, Yen Ting ^a   Yum, Jung Hwan ^a   Wang, Yanzhen ^a   Zhou, Fei ^a   Xue, Fei ^a   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; BARRIER LAYERS; CHANNEL MOBILITY; DEVICE PERFORMANCE; DOUBLE BARRIERS; EFFECTIVE MOBILITIES; FIELD-EFFECT; GATE OXIDE; HIGH MOBILITY; HIGH-FIELD; INP; METAL OXIDE SEMICONDUCTOR; MOBILITY ENHANCEMENT; MOSFETS; PEAK MOBILITY;

ALUMINUM; DIELECTRIC DEVICES; MOS DEVICES; MOSFET DEVICES;

FIELD EFFECT TRANSISTORS;

EID: 77949735254     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3350893     Document Type: Article

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