610 GHz InAlAs/In0.75GaAs metamorphic HEMTs with an ultra-short 15-nm-gate

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 613-616

  Yeon, Seong Jin ^a   Park, Myonghwan ^a   Choi, JeHyuk ^b   Seo, Kwangseok ^a  

^a Seoul National University   (South Korea)

^b Korea Advanced Nano Fab Center (KANC)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; ELECTRON MOBILITY; OPTICAL DESIGN;

INALAS/INGAAS; MAXIMUM TRANSCONDUCTANCE; NANO-GATE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 41749090285     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4419014     Document Type: Conference Paper

References (10)

1. Y. Yamashita et al., IEEE Electron Device Lett., vol. 23, p. 573, 2002.
2. K.-S. Lee et al,.IEEE Electron Device Lett., vol. 28, p. 672, 2007.
3. T. Enoki et al., in Proc. Int. Conf IPRM, p. 371, 1991.
4. S.-J. Yeon et al., Jpn. J Appl. Phys., vol. 46, p. 2296, 2007.
5. A. Endoh et al., Jpn. J Appl. Phys., vol. 42, p. 2214, 2003.
6. S. Babiker et al., Computational Electronics, IWCE-6, p. 178, 1998.
7. S.-J. Yeon et al., Jpn. J Appl. Phys., vol. 45, p.3376, 2006.
8. T. Suemitsu et al., Jpn. J Appl. Phys., vol.37, p. 1365, 1998.
9. N. Moll et al., IEEE Trans. Electron Devices, vol. 35, p. 879, 1988.
10. L. W. Massengill et al., Solid-state Electron., vol. 29, p. 725, 1986.