The impact of high-κ gate dielectrics and metal gate electrodes on sub-100 nm MOSFET's

IEEE Transactions on Electron Devices

Volumn 46, Issue 7, 1999, Pages 1537-1544

  Cheng, Baohong ^a,b,c   Cao, Min ^a,d   Rao, Ramgopal ^a,b,e   Inani, Anand ^b   Voorde, Paul Vande ^a,d   Greene, Wayne M ^a,d   Stork, Johannes M C ^a,d   Yu, Zhiping ^a,g   Zeitzoff, Peter M ^a,f   Woo, Jason C S ^a,b  

^a IEEE   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c MOTOROLA INC   (United States)

^d HEWLETT PACKARD LABORATORIES   (United States)

^e INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^f SEMATECH   (United States)

^g Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; GATES (TRANSISTOR); PERMITTIVITY;

METAL GATE ELECTRODES;

MOSFET DEVICES;

EID: 0032655915     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.772508     Document Type: Article

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