130nm InP DHBTs with ft >0.52THz and fmax >1.1THz

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2011, Pages 281-282

  Urteaga, M ^a   Pierson, R ^a   Rowell, P ^a   Jain, V ^b   Lobisser, E ^b   Rodwell, M J W ^b  

^a TELEDYNE SCIENTIFIC COMPANY   (United States)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT GAIN CUTOFF FREQUENCY; DEVICE PERFORMANCE; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS; EMITTER JUNCTIONS; HIGH POWER HANDLINGS; MATERIAL SYSTEMS; MIXED SIGNAL APPLICATIONS; POWER GAIN CUTOFF FREQUENCIES;

FREQUENCY BANDS; HETEROJUNCTION BIPOLAR TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84861658646     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2011.5994532     Document Type: Conference Paper

References (6)

1. R. Lai, et al, IEDMWashington DC, 2007
2. D-H. Kim, et. al, IEDM, San Fransisco, CA, 2010
3. V.Jain, et al, IEEE EDL vol. 32, no. 1 Jan 2011
4. M. Rodwell, et al, Proc. of IEEE, vol. 96, no.12, Feb 2008
5. M. Urteaga, et. al. to be presented 2011 Indium Phosphide and Related Materials (IPRM) Conference, May 2011
6. Y. Bester, et al, IEEE TED vol. 46, noA April 1999