Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation

Journal of Applied Physics

Volumn 102, Issue 3, 2007, Pages

  Quitoriano, Nathaniel J ^a,b   Fitzgerald, Eugene A ^a  

^a Massachusetts Institute of Technology Cambridge

^b HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PHASE SEPARATION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; TRANSMISSION ELECTRON MICROSCOPY;

DISLOCATION DENSITIES; MICROSCOPIC COMPOSITIONAL INHOMOGENEITIES; THREADING DISLOCATION DENSITY;

INDIUM PHOSPHIDE;

EID: 34548048158     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2764204     Document Type: Article

References (74)

1. W. Hafez and M. Feng, Appl. Phys. Lett. 86, 152101 (2005).
2. E. A. Fitzgerald, P. D. Kirchner, R. Proano, G. D. Pettit, J. M. Woodall, and D. G. Ast, Appl. Phys. Lett. 52, 1496 (1988).
3. G. P. Watson, E. A. Fitzgerald, Y.-H. Xie, and D. Monroe, J. Appl. Phys. 75, 263 (1994).
4. E. A. Fitzgerald, Mater. Sci. Rep. 7, 87 (1991).
5. J. W. Matthews, S. Mader, and T. B. Light, J. Appl. Phys. 41, 3800 (1970).
6. M. E. Groenert, C. W. Leitz, A. J. Pitera, V. Yang, H. Lee, R. J. Ram, and E. A. Fitzgerald, J. Appl. Phys. 93, 362 (2003).
7. M. E. Groenert, A. J. Pitera, R. J. Ram, and E. A. Fitzgerald, J. Vac. Sci. Technol. B 21, 1064 (2003).
8. M. L. Lee, D. A. Antoniadis, and E. A. Fitzgerald, Thin Solid Films 508, 136 (2006).
9. E. A. Fitzgerald and S. B. Samavedam, Line, Point and Surface Defect Morphology of Graded, Relaxed GeSi Alloys on Si Substrates (Elsevier, Strasbourg, 1997), pp. 3-10.
10. E. A. Fitzgerald, S. B. Samavedam, Y. H. Xie, and L. M. Giovane, Influence of Strain on Semiconductor Thin Film Epitaxy (AIP, Philadelphia, PA, 1997), pp. 1048-1056.
11. S. B. Samavedam and E. A. Fitzgerald, J. Appl. Phys. 81, 3108 (1997).
12. L. B. Freund, J. Appl. Phys. 68, 2073 (1990).
13. M. T. Bulsara, C. Leitz, and E. A. Fitzgerald, Appl. Phys. Lett. 72, 1608 (1998).
14. M. Bulsara, V. Yang, A. L. Thilderkvist, E. A. Fitzgerald, K. Hausler, and K. Eberl, J. Appl. Phys. 83, 592 (1998).
15. A. Y. Kim, W. S. McCullough, and E. Fitzgerald, J. Vac. Sci. Technol. B 17, 1485 (1999).
16. L. M. McGill, E. A. Fitzgerald, A. Y. Kim, J.-W. Huang, S. S. Yi, P. N. Grillot, and S. A. Stockman, J. Vac. Sci. Technol. B 22, 1899 (2004).
17. M. T. Currie, S. B. Samavedam, T. A. Langdo, C. W. Leitz, and E. A. Fitzgerald, Appl. Phys. Lett. 72, 1718 (1998).
18. J. W. Cahn, Acta Metall. 11, 1275 (1963).
19. S. D. Dahlgren, Metall. Trans. A 8A, 347 (1977).
20. A. Zunger, in NATO Advanced Study Institute on Statics and Dynamics of Alloy Phase Transformations, edited by, Patrice E. A. Turchi, and, Antonios Gonis, (Plenum, New York, 1994), Vol. 319, pp. 361-419.
21. H. Kubo and C. M. Wayman, Metall. Trans. A 10A, 633 (1979).
22. H. Kubo, I. Cornelis, and C. M. Wayman, Acta Metall. 28, 405 (1980).
23. N. J. Quitoriano and E. A. Fitzgerald, J. Appl. Phys. 101, 073509 (2007).
24. L. J. Cui, Y. P. Zeng, B. Q. Wang, J. Wu, Z. P. Zhu, and L. Y. Lin, J. Appl. Phys. 91, 2429 (2002).
25. J. M. Fastenau, Strain relaxation and Dislocation Filtering in Metamorphic HBT and HEMT Structures Grown on GaAs Substrates by MBE (IEEE, Kagoshima, 2004), pp. 346-349.
26. N. Becourt, F. Peiro, A. Comet, J. R. Morante, P. Gorostiza, G. Halkias, K. Michelakis, and A. Georgakilas, Appl. Phys. Lett. 71, 2961 (1997).
27. J. J. Rosenberg, M. Benlamri, P. D. Kirchner, J. M. Woodall, and G. D. Pettit, IEEE Electron Device Lett. ED-6, 491 (1985).
28. C. A. Wang, Appl. Phys. Lett. 76, 2077 (2000).
29. C. A. Wang, H. K. Choi, S. L. Ransom, G. W. Charache, L. R. Danielson, and D. M. DePoy, Appl. Phys. Lett. 75, 1305 (1999).
30. K. Y. Cheng, K. C. Hsieh, J. N. Baillargeon, and A. Mascarenhas, Formation of Lateral Quantum-Wells in Vertical Short-Period Superlattices (IOP, Seattte, WA, 1992), pp. 589-594.
31. P. Henoc, A. Izrael, M. Quillec, and H. Launois, Appl. Phys. Lett. 40, 963 (1982).
32. F. Glas, M. M. J. Treacy, M. Quillec, and H. Launois, J. Phys. Colloq. 43, 11 (1982).
33. F. Glas, P. Henoc, A. Izrael, H. Launois, M. Quillec, and M. M. J. Treacy, in Proceedings of the Tenth International Congress on Electron Microscopy, 1982, Vol. 2, p. 405.
34. T. L. McDevitt, S. Mahajan, and D. E. Laughlin, Phys. Rev. B 45, 6614 (1992).
35. B. Fultz and J. Howe, Transmission Electron Microscopy and Diffractometry of Materials (Springer, New York, 2002).
36. J. W. Cahn, Acta Metall. 10, 179 (1962).
37. E. A. Fitzgerald, Y.-H. Xie, D. Monroe, P. J. Silverman, J. M. Kuo, A. R. Kortan, F. A. Thiel, and B. E. Weir, J. Vac. Sci. Technol. B 10, 1807 (1992).
38. F. C. Frank, J. Cryst. Growth 51, 367 (1981).
39. X. C. Zhou, J. Jiang, A. Y. Du, J. W. Zhao, S. M. Mu, L.-M. Peng, and Z. T. Zhong, Strain-Field Induced Crosshatch Formation During Molecular Beam Epitaxy of InGaAsGaAs Films (Materials Research Society, Pittsburgh, PA, 1993), pp. 77-82.
40. S. Mahajan, B. V. Dutt, H. Temkin, R. J. Cava, and W. A. Bonner, J. Cryst. Growth 68, 589 (1984).
41. K. R. Breen, P. N. Uppal, and J. S. Ahearn, Interface Dislocation Structures in Inx Ga1-x AsGaAs Mismatched Epitaxy (Bozeman, MT, 1989), pp. 758-763.
42. M. R. Louthan, Jr., Trans. Metall. Soc. AIME 227, 1166 (1963).
43. T. Eto, A. Sato, and T. Mori, Acta Metall. 26, 499 (1978).
44. P. Ferguson and K. H. Jack, Philos. Mag. A 52, 509 (1985).
45. A. J. Bogers, Acta Metall. 10, 260 (1962).
46. I. P. Ipatova, V. G. Malyshkin, and V. A. Shchukin, J. Appl. Phys. 74, 7198 (1993).
47. P. Bellon, J. P. Chevalier, E. Augarde, J. P. Andre, and G. P. Martin, J. Appl. Phys. 66, 2388 (1989).
48. I. J. Murgatroyd, A. G. Norman, and G. R. Booker, J. Appl. Phys. 67, 2310 (1990).
49. H. D. Palfrey, M. Brown, and A. F. W. Willoughby, J. Electrochem. Soc. 128, 2224 (1981).
50. H. D. Palfrey, M. Brown, and A. F. W. Willoughby, J. Electron. Mater. 12, 863 (1983).
51. P. M. Petroff, A. Y. Cho, F. K. Reinhart, A. C. Gossard, and W. Wiegmann, Phys. Rev. Lett. 48, 170 (1982).
52. J. E. Bernard, S. Froyen, and A. Zunger, Phys. Rev. B 44, 11178 (1991).
53. M. Zorn, Phys. Rev. B 60, 8185 (1999).
54. S. R. Kurtz, J. M. Olson, and A. Kibbler, Appl. Phys. Lett. 57, 1922 (1990).
55. F. Peiro, A. Cornet, J. R. Morante, S. Clark, and R. H. Williams, Appl. Phys. Lett. 59, 1957 (1991).
56. M. M. J. Treacy, J. M. Gibson, and A. Howie, Philos. Mag. A 51, 389 (1985).
57. V. Eremenko, L. Gonzalez, Y. Gonzalez, V. Vdovin, L. Vazquez, G. Aragon, M. Herrera, and F. Briones, Mater. Sci. Eng., B B91-B92, 269 (2002).
58. Y. Takano, K. Kobayashi, S. Shirakata, M. Umezawa, and S. Fuke, J. Cryst. Growth 282, 36 (2005).
59. Y. Takano, K. Kobayashi, H. Iwahori, M. Umezawa, S. Shirakata, and S. Fuke, Jpn. J. Appl. Phys., Part 1 44, 6403 (2005).
60. S. Hasenohrl, J. Novak, I. Vavra, and A. Satka, Material Properties of Graded Composition Inx Ga1-x P Buffer Layers Grown on GaP by Organometallic Vapor Phase Epitaxy (Elsevier, Lahina, HI, 2004), pp. 633-641.
61. L. M. McGill, thesis, Massachusetts Institute of Technology, 2004.
62. A. Y. Kim, thesis, Massachusetts Institute of Technology, 2000.
63. M. T. Bulsara, thesis, Massachusetts Institute of Technology, 1998.
64. W. Wegscheider and H. Cerva, J. Vac. Sci. Technol. B 11, 1056 (1993).
65. G. B. Stringfellow, J. Cryst. Growth 27, 21 (1974).
66. E. L. Huston, J. W. Cahn, and J. E. Hilliard, Acta Metall. 14, 1053 (1966).
67. D. Turnbull and H. N. Treaftis, Trans. Metall. Soc. AIME 212, 33 (1958).
68. J. W. Cahn, Acta Metall. 7, 18 (1959).
69. S. N. G. Chu, S. Nakahara, K. E. Strege, and W. D. Johnston, Jr., J. Appl. Phys. 57, 4610 (1985).
70. L. Gonzalez, Y. Gonzalez, G. Aragon, M. J. Castro, M. L. Dotor, and D. J. Dunstan, J. Appl. Phys. 80, 3327 (1996).
71. C. W. Leitz, M. T. Currie, A. Y. Kim, J. Lai, E. Robbins, E. A. Fitzgerald, and M. T. Bulsara, J. Appl. Phys. 90, 2730 (2001).
72. T. Y. Liu, P. M. Petroff, H. Kroemer, and A. C. Gossard, Electronic Properties of Dislocations in Heavily Dislocated Quantum Well Structures: Doping Effects (Materials Research Society, San Diego, CA, 1989), pp. 393-398.
73. J. P. Hirth and J. Lothe, Theory of Dislocations (Wiley, New York, 1982).
74. I. Tangring, Appl. Phys. Lett. 86, 171902 (2005).