Improvement of RF and noise characteristics using a cavity structure in InAlAs/InGaAs HEMTs

IEEE Transactions on Electron Devices

Volumn 59, Issue 8, 2012, Pages 2136-2141

  Takahashi, Tsuyoshi ^a   Sato, Masaru ^a   Nakasha, Yasuhiro ^a   Hirose, Tatsuya ^a   Hara, Naoki ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Cavity; cutoff frequency; high electron mobility transistor (HEMT); noise figure; parasitic capacitance

Indexed keywords

CAVITY; CAVITY STRUCTURE; GATE REGION; HIGH FREQUENCY HF; INALAS/INGAAS; MINIMUM NOISE FIGURE; MULTILAYER INTERCONNECTIONS; NOISE CHARACTERISTIC; PARASITIC CAPACITANCE;

CUTOFF FREQUENCY; MONOLITHIC INTEGRATED CIRCUITS; NOISE FIGURE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84864740820     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2200254     Document Type: Article

References (20)

1. D.-H. Kim, B. Brar, and J. A. del Alamo, "fT=688 GHz and fmax=800 GHz in Lg=40 nm In0. 7Ga0. 3As MHEMTs with gm-max > 2. 7 mS/μm," in IEDM Tech. Dig. , 2011, pp. 319-322.
2. D.-H. Kim and J. A. del Alamo, "30-nm InAs PHEMTs with fT=644 GHz and fmax=681 GHz," IEEE Electron Device Lett. , vol. 31, no. 8, pp. 806-808, Aug. 2010.
3. R. Lai, X. B. Mei, W. R. Deal, W. Yoshida, Y. M. Kim, P. H. Liu, J. Lee, J. Uyeda, V. Radisic, M. Lange, T. Gaier, L. Samoska, and A. Fung, "Sub 50 nm InP HEMT device with Fmax greater than 1 THz," in IEDM Tech. Dig. , 2007, pp. 609-611.
4. A. Leuther, A. Tessmann, I. Kallfass, H. Massler, R. Loesch, M. Schlechtweg, M. Mikulla, and O. Ambacher, "Metamorphic HEMT technology for submillimeter-wave MMIC applications," in Proc. IEEE 22nd Int. Conf. IPRM, 2010, pp. 425-430.
5. R. Lai, X. B. Mei, S. Sarkozy, W. Yoshida, P. H. Liu, J. Lee, M. Lange, V. Radisic, K. Leong, and W. Deal, "Sub 50 nm InP HEMT with fT=586 GHz and amplifier circuit gain at 390 GHz for sub-millimeter wave applications," in Proc. IEEE 22nd Int. Conf. IPRM, 2010, pp. 137-139.
6. Y. Nakasha, M. Sato, T. Tajima, Y. Kawano, T. Suzuki, T. Takahashi, K. Makiyama, T. Ohki, and N. Hara, "W-band transmitter and receiver for 10-Gb/s impulse radio with an optical-fiber interface," IEEE Trans. Microw. Theory Tech. , vol. 57, no. 12, pp. 3171-3180, Dec. 2009.
7. M. Sato, H. Sato, T. Hirose, T. Ohki, T. Takahashi, K. Makiyama, H. Kobayashi, K. Sawaya, and K. Mizuno, "Compact receiver module for a 94 GHz band passive millimeter-wave imager," IET Microw. Antennas Propag. , vol. 2, no. 8, pp. 848-853, Dec. 2008.
8. T. Takahashi, K. Makiyama, N. Hara, M. Sato, and T. Hirose, "Improvement in high frequency and noise characteristics of InP-based HEMTs by reducing parasitic capacitance," in Proc. IEEE 20th Int. Conf. IPRM, 2008, p. MoA 3. 4.
9. N. Hara, K. Makiyama, T. Takahashi, K. Sawada, T. Arai, T. Ohki, M. Nihei, T. Suzuki, Y. Nakasha, and M. Nishi, "Highly uniform InAlAs/InGaAs HEMT technology for high-speed optical communication system ICs," IEEE Trans. Semicond. Manuf. , vol. 16, no. 3, pp. 370-375, Aug. 2003.
10. K. Makiyama, T. Takahashi, T. Suzuki, K. Sawada, T. Ohki, M. Nishi, N. Hara, and M. Takikawa, "Improvement of circuit-speed of HEMTs IC by reducing the parasitic capacitance," in IEDM Tech. Dig. , 2003, pp. 727-730.
11. T. Suemitsu, H. Yokoyama, Y. Umeda, T. Enoki, and Y. Ishii, "Highperformance 0. 1-μm gate enhancement-mode InAlAs/InGaAs HEMTs using two-step recessed gate technology," IEEE Trans. Electron Devices, vol. 46, no. 6, pp. 1074-1080, Jun. 1999.
12. G. K. Reeves and H. B. Harrison, "Obtaining the specific contact resistance from transmission line model measurements," IEEE Electron Device Lett. , vol. EDL-3, no. 5, pp. 111-113, May 1982.
13. K. Lee, M. S. Shur, A. J. Valois, G. Y. Robinson, X. C. Zhu, and A. V. del Ziel, "A new technique for characterization of the end resistance in modulation-doped FETs," IEEE Trans. Electron Devices, vol. ED-31, no. 10, pp. 1394-1398, Oct. 1984. (Pubitemid 16472125)
14. M. Kantanen, M. Lahdes, T. Vähä-Heikkilä, and J. Tuovinen, "A wideband on-wafer noise parameter measurement system at 50-75 GHz," IEEE Trans. Microw. Theory Tech. , vol. 51, no. 5, pp. 1489-1495, May 2003.
15. H. Fukui, "Optimal noise figure of microwave GaAs MESFETs," IEEE Trans. Electron Devices, vol. ED-26, no. 7, pp. 1032-1037, Jul. 1979. (Pubitemid 9469204)
16. C. R. Poole and D. K. Paul, "Optimum noise measure termination for microwave transistor amplifiers," IEEE Trans. Microw. Theory Tech. , vol. MTT-33, no. 11, pp. 1254-1257, Nov. 1985. (Pubitemid 16539414)
17. T. Takahashi, M. Sato, Y. Nakasha, T. Hirose, and N. Hara, "Noise figure improvement in InP-based HEMTs using wide gate head and cavity structure," IEEE Electron Device Lett. , vol. 33, no. 2, pp. 206-208, Feb. 2012.
18. T. Takahashi, M. Sato, K. Makiyama, T. Hirose, and N. Hara, "InAlAs/InGaAs HEMTs with minimum noise figure of 1. 0 dB at 94 GHz," in Proc. IEEE 19th Int. Conf. IPRM, 2007, pp. 55-58. (Pubitemid 47486468)
19. T. Takahashi, M. Sato, Y. Nakasha, T. Hirose, and N. Hara, "Improvement in noise figure of wide-gate-head InP-based HEMTs with cavity structure," in Proc. IEEE 22nd Int. Conf. IPRM, 2010, pp. 434-437.
20. D. Delagebeaudeuf, J. Chevrier, M. Laviron, and P. Delescluse, "A new relationship between the Fukui coefficient and optimal current value for low-noise operation of field-effect transistors," IEEE Electron Device Lett. , vol. EDL-6, no. 9, pp. 444-445, Sep. 1985. (Pubitemid 16479529)