InP-DHBT-on-BiCMOS technology with fTfmax of 400/350 GHz for heterogeneous integrated millimeter-wave sources

IEEE Transactions on Electron Devices

Volumn 60, Issue 7, 2013, Pages 2209-2216

  Kraemer, Tomas ^a   Ostermay, Ina ^a   Jensen, Thomas ^a   Johansen, Tom Keinicke ^a,b   Schmueckle, Franz Josef ^a   Thies, Andreas ^a   Krozer, Viktor ^a   Heinrich, Wolfgang ^a   Krueger, Olaf ^a   Traenkle, Guenther ^a   Lisker, Marco ^c   Trusch, Andreas ^c   Kulse, Philipp ^c   Tillack, Bernd ^c  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^b TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

^c INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS   (Germany)

Author keywords

BiCMOS integrated circuits; double heterojunction bipolar transistors (DHBT); integrated circuit interconnections; millimeter wave circuits; voltage controlled oscillators

Indexed keywords

BICMOS INTEGRATED CIRCUITS; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATED CIRCUIT INTERCONNECTIONS; MILLIMETER WAVE CIRCUITS; VOLTAGE-CONTROLLED-OSCILLATOR;

INTEGRATED CIRCUITS; MILLIMETER WAVES; OSCILLISTORS; SILICON WAFERS; VARIABLE FREQUENCY OSCILLATORS;

BICMOS TECHNOLOGY;

EID: 84879982458     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2264141     Document Type: Article

References (23)

1. T. B. Reed, M. Rodwell, Z. Griffith, P. Rowell, A. Young, M. Urteaga, and M. Field, "A 220 GHz InP HBT solid-state power amplifier MMIC with 90 mW POUT at 8.2 dB compressed gain," in Proc. Compound Semicond. Integr. Circuit Symp., Oct. 2012, pp. 1-4.
2. V. Radisic, K. M. K. H. Leong, S. Sarkozy, X. Mei, W. Yoshida, P. H. Liu, and R. Lai, "A 75 mW 210 GHz power amplifier module," in Proc. Compound Semicond. Integr. Circuit Symp., Oct. 2011, pp. 1-4.
3. P. VanDerVoorn, M. Agostinelli, S.-J. Choi, G. Curello, H. Deshpande, M. A. El-Tanani, W. Hafez, U. Jalan, L. Janbay, M. Kang, K.-J. Koh, K. Komeyli, H. Lakdawala, J. Lin, N. Lindert, S. Mudanai, J. Park, K. Phoa, A. Rahman, J. Rizk, L. Rockford, G. Sacks, K. Soumyanath, H. Tashiro, S. Taylor, C. Tsai, H. Xu, J. Xu, L. Yang, I. Young, J.-Y. Yeh, J. Yip, P. Bai, and C.-H. Jan, "A 32 nm low power RF CMOS SOC technology featuring high-k/metal gate," in Proc. VLSI Technol. Symp., Jun. 2010, pp. 137-138.
4. B. Heinemann, R. Barth, D. Bolze, J. Drews, G. G. Fischer, A. Fox, O. Fursenko, T. Grabolla, U. Haak, D. Knoll, R. Kurps, M. Lisker, S. Marschmeyer, H. Rücker, D. Schmidt, J. Schmidt, M. A. Schubert, B. Tillack, C. Wipf, D. Wolansky, and Y. Yamamoto, "SiGe HBT technology with fT/fmax of 300 GHz/500 GHz and 2.0 ps CML gate delay," in Proc. IEEE IEDM, Dec. 2010, pp. 351-354.
5. S. Raman, C. L. Dohrman, and T.-H. Chang, "The DARPA diverse accessible heterogeneous integration (DAHI) program: Convergence of compound semiconductor devices and silicon-enabled architectures," in Proc. IEEE Int. Symp. Radio-Freq. Integr. Technol., Nov. 2012, pp. 1-6.
6. W. K. Liu, D. Lubyshev, J. M. Fastenau, Y. Wu, M. T. Bulsara, E. A. Fitzgerald, M. Urteaga, W. Ha, J. Bergman, B. Brar, W. E. Hoke, J. R. LaRoche, K. J. Herrick, T. E. Kazior, D. Clark, D. Smith, R. F. Thompson, C. Drazek, and N. Daval, "Monolithic integration of InP-based transistors on Si substrates using MBE," J. Cryst. Growth, vol. 311, no. 7, pp. 1979-1983, Mar. 2009.
7. Y. Royter, P. R. Patterson, J. C. Li, K. R. Elliott, T. Hussain, M. F. Boag-O'Brien, J. R. Duvall, M. C. Montes, D. A. Hitko, J. S. Sewell, M. Sokolich, D. H. Chow, and P. D. Brewer, "Dense heterogeneous integration for InP Bi-CMOS technology," in Proc. IEEE Int. Conf. Indium Phosph. Rel. Mater., May 2009, pp. 105-110.
8. A. Gutierrez-Aitken, P. Chang-Chien, D. Scott, K. Hennig, E. Kaneshiro, P. Nam, N. Cohen, D. Ching K. Thai, B. Oyama, J. Zhou, C. Geiger, B. Poust, M. Parlee, R. Sandhu, W. Phan, A. Oki, and R. Kagiwada, "Advanced heterogeneous integration of InP HBT and CMOS Si technologies," in Proc. Compound Semicond. Integr. Circuit Symp., Oct. 2010, pp. 1-4.
9. W. E. Hoke, R. V. Chelakara, J. P. Bettencourt, T. E. Kazior, J. R. LaRoche, T. D. Kennedy, J. J. Mosca, A. Torabi, A. J. Kerr, H. S. Lee, and T. Palacios, "Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit," J. Vacuum Sci. Technol. B, vol. 30, no. 2, pp. 02B101-1-02B101-6, Mar. 2012.
10. L. Fulbert and J.-M. Fedeli, "Photonics-electronics integration on CMOS," in Proc. Solid-State Device Res. Conf., Sep. 2011, pp. 13-18.
11. T. Kraemer, M. Rudolph, F. J. Schmueckle, J. Wuerfl, and G. Traenkle, "InP DHBT process in transferred substrate technology with ft and fmax over 400 GHz," IEEE Trans. Electron Devices, vol. 56, no. 9, pp. 1897-1903, Sep. 2009.
12. B. Heinemann, R. Barth, D. Knoll, H. Rücker, B. Tillack, and W. Winkler, "High-performance BiCMOS technologies without epitaxiallyburied subcollectors and deep trenches," Semicond. Sci. Technol., vol. 22, no. 1, pp. S153-S157, Dec. 2006.
13. (2010). IHP Low-Volume & Multi-Project Service [Online]. Available: http://www.ihp-microelectronics.com/en/services/mpwprototyping/ sigec-bicmos-technologies.html
14. J. Bauer, P. Kulse, U. Haak, G. Old, G. Scheuring, S. Döbereiner, F. Hillmann, H.-J. Brück, M. Kaynak, K.-E. Ehwald, S. Marschmeyer, M. Birkholz, and K. Schulz, "Alignment technology for backside integration," in Proc. 27th Eur. Mask Lithogr. Conf., Jan. 2011, pp. 798508-1-798508-11.
15. F. Niklaus, R. J. Kumar, J. J. McMahon, J. Yu, T. Matthias, M. Wimplinger, P. Lindner, J. Q. Lu, T. S. Cale, and R. J. Gutmann, "Effects of bonding process parameters on wafer-to-wafer alignment accuracy in benzocyclobutene (BCB) dielectric wafer bonding," in Proc. Symp. Mater., Technol. Rel. Adv. Interconnects, vol. 863. Apr. 2005, pp. 393-398. (Pubitemid 41764269)
16. R. F. Scholz, F. Korndorfer, B. Senapati, and A. Rumiantsev, "Advanced technique for broadband on-wafer RF device characterization, " in Proc. RF Technol. Group Conf., Jun. 2004, pp. 83-90. (Pubitemid 40682255)
17. R. Doerner and A. Rumiantsev, "Verification of the wafer-level LRM+ calibration technique for GaAs applications up to 110 GHz," in Proc. Autom. RF Technol. Group Conf., Jun. 2005, pp. 15-19.
18. T. K. Johansen, V. Krozer, A. Konczykowska, and J. Vidkjær, "Large-signal modeling of high-speed InP DHBTs using electromagnetic simulation based de-embedding," in Proc. IEEE, Jun. 2006, pp. 655-658. (Pubitemid 46924307)
19. T. K. Johansen, V. Krozer, V. Nodjiadjim, A. Konczykowska, J. Y. Dupuy, and M. Riet, "Improved external base resistance extraction for submicrometer InP/InGaAs DHBT models," IEEE Trans. Electron Devices, vol. 58, no. 9, pp. 3004-3011, Sep. 2011.
20. T. Kraemer, C. Meliani, F. J. Schmueckle, J. Wuerfl, and G. Traenkle, "Traveling wave amplifiers in transferred substrate InP-HBT technology," IEEE Trans. Microw. Theory Technol., vol. 57, no. 9, pp. 2114-2121, Sep. 2009.
21. T. Weiland, M. Timm, and I. Munteanu, "A practical guide to 3-D simulation," IEEE Microw. Mag., vol. 9, no. 6, pp. 62-75, Dec. 2008.
22. L. Wang, S. Glisic, J. Borngraeber, W. Winkler, and J. C. Scheytt, "A single-ended fully integrated SiGe 77/79 GHz receiver for automotive radar," IEEE J. Solid-State Circuits, vol. 43, no. 9, pp. 1897-1908, Sep. 2008.
23. T. Jensen, T. Al-Sawaf, M. Lisker, S. Glisic, M. Elkhouly, T. Kraemer, I. Ostermay, C. Meliani, B. Tillack, V. Krozer, and W. Heinrich, "A 164 GHz hetero-integrated source in InP-on-BiCMOS technology," Eur. Microw., Oct. 2013, to be published.