High mobility In 0.53Ga 0.47As quantum-well metal oxide semiconductor field effect transistor structures

Journal of Applied Physics

Volumn 111, Issue 10, 2012, Pages

  Yang, Li ^a   Cheng, Cheng Wei ^b   Bulsara, Mayank T ^c   Fitzgerald, Eugene A ^c  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c Massachusetts Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB SCATTERING; CVD PROCESS; EXPERIMENTAL DATA; GATE BIAS; HALL MEASUREMENTS; HIGH ELECTRON MOBILITY; HIGH MOBILITY; IDENTICAL STRUCTURES; IN-SITU; INTERFACIAL DEFECT; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MODEL-BASED OPC; MOSFET STRUCTURES; PEAK MOBILITY;

ALUMINUM; ATOMIC LAYER DEPOSITION; CHEMICAL VAPOR DEPOSITION; ELECTRON BEAM LITHOGRAPHY; ELECTRON MOBILITY; GATE DIELECTRICS; HALL MOBILITY; MOSFET DEVICES; SEMICONDUCTOR QUANTUM WELLS;

GALLIUM;

EID: 84862118403     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4721328     Document Type: Conference Paper

References (19)

1. M. Radosavljevic, B. Chu-Kung, S. Corcoran, G. Dewey, M. K. Hudait, J. M. Fastenau, J. Kavalieros, W. K. Liu, D. Lubyshev, M. Metz, K. Millard, N. Mukherjee, W. Rachmady, U. Shah, and Robert Chau, Tech. Dig.-Int. Electron Devices Meet. 2009, 319.
2. W. D. Hu, X. S. Chen, Z. J. Quan, C. S. Xia, W. Lu, and P. D. Ye, J. Appl. Phys. 100, 074501 (2006). 10.1063/1.2354327
3. W. D. Hu, X. S. Chen, Z. J. Quan, X. M. Zhang, Y. Huang, C. S. Xia, W. Lu, and P. D. Ye, J. Appl. Phys 102, 034502 (2007). 10.1063/1.2764206
4. P. Nagaiah, V. Tokranov, M. Yakimov, S. Koveshnikov, S. Oktyabrsky, D. Veksier, W. Tsai, and G. Bersuker, J. Vac. Sci. Technol. B 28, C3H5 (2010). 10.1116/1.3360903
5. S. Oktyabrsky, D. Veksler, P. Nagaiah, T. Chidambaram, V. Tokranov, M. Yakimov, R. Kambhampati, Y.-T. Chen, G. Bersuker, N. Goel, and C. Hobbs, ECS Trans. 35, 385-395 (2011). 10.1149/1.3569931
6. Y. Xuan, T. Shen, M. Xu, Y. Q. Wu, and P. D. Ye, Tech. Dig.-Int. Electron Devices Meet. 2008, 371.
7. W. Wang, J. Deng, J. C. M. Hwang, Y. Xuan, Y. Wu, and P. D. Ye, Appl. Phys. Lett. 96, 072102 (2010). 10.1063/1.3315870
8. J. J. Gu, O. Koybasi, Y. Q. Wu, and P. D. Ye, Appl. Phys. Lett. 99, 112113 (2011). 10.1063/1.3638474
9. L. Yang, C. W. Cheng, M. T. Bulsara, E. A. Fitzgerald, ECS Trans. 41, 219 (2011). 10.1149/1.3633301
10. C. W. Cheng and E. A. Fitzgerald, Appl. Phys. Lett. 93, 031902 (2008). 10.1063/1.2960574
11. C. W. Cheng and E. A. Fitzgerald, Appl. Phys. Lett. 96, 202101 (2010). 10.1063/1.3428790
12. R. Chwang, B. J. Smith, and C. R. Crowell, Solid-State Electron. 17, 1217 (1974). 10.1016/0038-1101(74)90001-X
13. J. Haeussler and H. Lippmann, Solid-State Electron. 11, 173 (1968). 10.1016/0038-1101(68)90149-4
14. K. Ziegler, Appl. Phys. Lett. 28, 678 (1976). 10.1063/1.88620
15. D. P. Docter, K. R. Elliott, A. E. Schmitz, K. Kiziloglu, J. J. Brown, D. S. Harvey, H. M. Karatnicki, in Proceedings of the 10th International Conference on Indium Phosphide and Related Materials (1998), p. 219.
16. F. Stern, Phys. Rev. Lett. 18, 546 (1967). 10.1103/PhysRevLett.18.546
17. T. Ando, A. B. Fowler, and F. Stern, Rev. Mod. Phys. 54, 437 (1981). 10.1103/RevModPhys.54.437
18. F. Stern, Phys. Rev. Lett. 44, 1469 (1982). 10.1103/PhysRevLett.44.1469
19. S. Das Sarma and E. H. Hwang, Phys. Rev. B 69, 195305 (2004). 10.1103/PhysRevB.69.195305