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Volumn , Issue , 2008, Pages
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Plasma PH3-passivated high mobility inversion InGaAs MOSFET fabricated with self-aligned gate-first process and HfO2/TaN gate stack
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Author keywords
[No Author keywords available]
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Indexed keywords
CONTROL SAMPLES;
DIRECT DEPOSITIONS;
FREQUENCY DISPERSIONS;
GATE STACKS;
HIGH MOBILITIES;
IN-SITU;
LOW RESISTIVITIES;
MODE III;
MOS FETS;
N-MOSFET;
RECTIFYING CHARACTERISTICS;
SELF-ALIGNED GATES;
SUB-100 NM;
SURFACE PASSIVATIONS;
DISTILLATION;
DRAIN CURRENT;
ELECTRON DEVICES;
HAFNIUM COMPOUNDS;
LOGIC GATES;
MOS DEVICES;
MOSFET DEVICES;
PLASMA DEPOSITION;
PLASMAS;
SEMICONDUCTING INDIUM;
SEMICONDUCTING SILICON COMPOUNDS;
TANNING;
TANTALUM COMPOUNDS;
PASSIVATION;
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EID: 64549118164
PISSN: 01631918
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/IEDM.2008.4796705 Document Type: Conference Paper |
Times cited : (26)
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References (11)
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