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Volumn , Issue , 2008, Pages

Plasma PH3-passivated high mobility inversion InGaAs MOSFET fabricated with self-aligned gate-first process and HfO2/TaN gate stack

Author keywords

[No Author keywords available]

Indexed keywords

CONTROL SAMPLES; DIRECT DEPOSITIONS; FREQUENCY DISPERSIONS; GATE STACKS; HIGH MOBILITIES; IN-SITU; LOW RESISTIVITIES; MODE III; MOS FETS; N-MOSFET; RECTIFYING CHARACTERISTICS; SELF-ALIGNED GATES; SUB-100 NM; SURFACE PASSIVATIONS;

EID: 64549118164     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796705     Document Type: Conference Paper
Times cited : (26)

References (11)
  • 7
  • 10
    • 44349160650 scopus 로고    scopus 로고
    • I. Ok, et al., Appl. Phys. Lett. vol. 92, pp. 202908, 2008.
    • (2008) Appl. Phys. Lett , vol.92 , pp. 202908
    • Ok, I.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.