Enhancement-mode GaAs MOSFETs with an In0.3Ga0.7As channel, a mobility of over 5000 cm2/V · s, and transconductance of over 475 μS/μm

IEEE Electron Device Letters

Volumn 28, Issue 12, 2007, Pages 1080-1082

  Hill, Richard J W ^a   Moran, David A J ^a   Li, Xu ^a   Zhou, Haiping ^a   Macintyre, Douglas ^a   Thoms, Stephen ^a   Asenov, Asen ^a   Zurcher, Peter ^b   Rajagopalan, Karthik ^b   Abrokwah, Jonathan ^b   Droopad, Ravi ^b   Passlack, Matthias ^b   Thayne, Iain G ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

Enhancement mode (e mode); GaGdO; Gallium compounds; High ; III V MOSFET; MOSFET

Indexed keywords

ELECTRON MOBILITY; GATE DIELECTRICS; LEAKAGE CURRENTS; SEMICONDUCTING GALLIUM ARSENIDE; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

ENHANCEMENT MODE (E-MODE); LOW-DRAIN-BIAS MEASUREMENTS; SATURATION DRIVE CURRENT;

MOSFET DEVICES;

EID: 36549081349     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.910009     Document Type: Article

References (8)

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