Ultralow-power cryogenic InP HEMT with minimum noise temperature of 1 K at 6 GHz

IEEE Electron Device Letters

Volumn 33, Issue 5, 2012, Pages 664-666

  Schleeh, J ^a   Alestig, G ^a   Halonen, J ^a   Malmros, A ^a   Nilsson, B ^a   Nilsson, P A ^a   Starski, J P ^a   Wadefalk, N ^a   Zirath, H ^a   Grahn, J ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Cryogenic; InGaAs InAlAs InP high electron mobility transistor (InP HEMT); Low noise; Low power

Indexed keywords

DC POWER; GATE CURRENT; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); INP HEMT; LOW NOISE; LOW POWER; LOW-NOISE OPERATIONS; NOISE TEMPERATURE; ULTRA-LOW POWER;

CRYOGENICS; LOW NOISE AMPLIFIERS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84860359326     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2187422     Document Type: Article

References (9)

1. N. Wadefalk, A. Mellberg, I. Angelov, M. E. Barsky, S. Bui, E. Choumas, R. W. Grundbacher, E. L. Kollberg, R. Lai, N. Rorsman, P. Starski, J. Stenarson, D. C. Streit, and H. Zirath, "Cryogenic wide-band ultra-lownoise IF amplifiers operating at ultra-low DC power," IEEE Trans. Microw. Theory Tech., vol. 51, no. 6, pp. 1705-1711, Jun. 2003.
2. M. W. Pospieszalski, "Extremely low-noise amplification with cryogenic FETs and HFETs: 1970-2004," IEEE Microw. Mag., vol. 6, no. 3, pp. 62-75, Sep. 2005.
3. Y. C. Chou, R. Grundbacher, D. Leung, R. Lai, Q. Kan, D. Eng, P. H. Liu, T. Block, and A. Oki, "Degradation mechanism and reliability improvement of InGaAs/InAlAs/InP HEMTs using new gate metal electrode technology," in Proc. 17th IEEE IPRM Conf., May 2005, pp. 223-226.
4. M. W. Pospieszalski, W. J. Lakatosh, R. Lai, K. L. Tan, D. C. Streit, P. H. Liu, R. M. Dia, and J. Velebir, "Millimeter-wave, cryogenicallycoolable amplifiers using AlInAs/GaInAs/InP HEMTs," in Proc. IEEE MTT-S Int. Microw. Symp. Dig., New York, 1993, pp. 515-518.
5. J. L. Cano, N.Wadefalk, and J. D. Gallego-Puyol, "Ultra-wideband chip attenuator for precise noise measurements at cryogenic temperatures," IEEE Trans. Microw. Theory Tech., vol. 58, no. 9, pp. 2504-2510, Sep. 2010.
6. I. Lopez-Fernandez, J. D. Gallego, C. Diez, A. Barcia, and J. Martin-Pintado, "Wide band, ultra low noise cryogenic InP IF amplifiers for the Herschel mission radiometers," in Proc. SPIE, 2003, pp. 489-500.
7. M. W. Pospieszalski, "Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependence," IEEE Trans. Microw. Theory Tech., vol. 37, no. 9, pp. 1340-1350, Sep. 1989.
8. I. Malo, J. Gallego, C. Diez, I. López-Ferńndez, and C. Briso, "Improved multi-octave 3 dB IF hybrid for radio astronomy cryogenic receivers," in Proc. 20th Int. Symp. Space Terahertz Tech., Charlottesville, VA, Apr. 20-22, 2009, pp. 300-306.
9. J. Pandian, L. Baker, G. Cortes, P. Goldsmith, A. Deshpande, R. Ganesan, J. Hagen, L. Locke, N. Wadefalk, and S. Weinreb, "Low-noise 6-8 GHz receiver," IEEE Microw. Mag., vol. 7, no. 6, pp. 74-84, Dec. 2006.