Gate dielectric on compound semiconductors by molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 3, 2006, Pages 1479-1482

  Droopad, Ravi ^a   Rajagopalan, K ^a   Abrokwah, J ^a   Passlack, M ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAAS CAP LAYER; GATE DIELECTRIC; HIGH- Κ GATE DIELECTRIC STACK; INTERFACE QUALITY;

ELECTRON MOBILITY; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; MOSFET DEVICES; PERMITTIVITY; SEMICONDUCTOR MATERIALS;

DIELECTRIC DEVICES;

EID: 33744823799     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2197517     Document Type: Article

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