III-V-on-nothing metal-oxide-semiconductor field-effect transistors enabled by top-down nanowire release process: Experiment and simulation

Applied Physics Letters

Volumn 99, Issue 11, 2011, Pages

  Gu, J J ^a   Koybasi, O ^a   Wu, Y Q ^a   Ye, P D ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AIR-GAPS; ATOMIC LAYER DEPOSITED; CHANNEL LAYERS; CHANNEL LENGTH; DRAIN-INDUCED BARRIER LOWERING; GATE-ALL-AROUND; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOSFETS; PROCESSING TECHNIQUE; RELEASE PROCESS; SHORT-CHANNEL EFFECT; TOPDOWN;

DIELECTRIC DEVICES; GATE DIELECTRICS; HYDROCHLORIC ACID; ION BEAMS; NANOWIRES; TRANSISTORS; VANADIUM;

MOSFET DEVICES;

EID: 80053191608     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3638474     Document Type: Article

References (20)

1. Y. Xuan, Y. Q. Wu, and P. D. Ye, IEEE Electron Device Lett. 29, 294 (2008). 10.1109/LED.2008.917817
2. Y. Xuan, T. Shen, M. Xu, Y. Q. Wu, and P. D. Ye, Tech. Dig.-Int. Electron Devices Meet. 2008, 371.
3. T. D. Lin, H. C. Chiu, P. Chang, L. T. Tung, C. P. Chen, M. Hong, J. Kwo, W. Tsai, and Y. C. Wang, Appl. Phys. Lett. 93, 033516 (2008). 10.1063/1.2956393
4. J. Lin, S. Lee, H.-J. Oh, W. Yang, G. Q. Lo, D. L. Kwong, and D. Z. Chi, Tech. Dig.-Int. Electron Devices Meet. 2008, 401.
5. D. Lin, G. Brammertz, S. Sioncke, C. Fleischmann, A. Delabie, K. Martens, H. Bender, T. Conard, W. H. Tseng, J. C. Lin, W. E. Wang, K. Temst, A. Vatomme, J. Mitard, M. Caymax, M. Meuris, M. Heyns, and T. Hoffmann, Tech. Dig.-Int. Electron Devices Meet. 2009, 327.
6. U. Singisetti, M. A. Wistey, G. J. Burek, A. K. Baraskar, B. J. Thibeault, A. C. Gossard, M. J. W. Rodwell, B. Shin, E. J. Kim, P. C. McIntyre, B. Yu, Y. Yuan, D. Wang, Y. Taur, P. Asbeck, and Y.-J. Lee, IEEE Electron Device Lett. 30, 1128 (2009). 10.1109/LED.2009.2031304
7. H.-C. Chin, X. Liu, X. Gong, and Y.-C. Yeo, IEEE Trans. Electron Devices 57, 973 (2010). 10.1109/TED.2010.2044285
8. Y. Q. Wu, W. K. Wang, O. Koybasi, D. N. Zakharov, E. A. Stach, S. Nakahara, J. C. M. Hwang, and P. D. Ye, IEEE Electron Device Lett. 30, 700 (2009). 10.1109/LED.2009.2022346
9. Y. Q. Wu, M. Xu, R. S. Wang, O. Koybasi, and P. D. Ye, Tech. Dig.-Int. Electron Devices Meet. 2009, 323.
10. J. J. Gu, Y. Q. Wu, and P. D. Ye, J. Appl. Phys. 109, 053709 (2011). 10.1063/1.3553440
11. Y. Q. Wu, R. S. Wang, T. Shen, J. J. Gu, and P. D. Ye, Tech. Dig.-Int. Electron Devices Meet. 2009, 331.
12. H.-C. Chin, X. Gong, L. Wang, H. K. Lee, L. Shi, and Y.-C. Yeo, IEEE Electron Device Lett. 32, 146 (2011). 10.1109/LED.2010.2091672
13. M. Radosavljevic, G. Dewey, J. M. Fastenau, J. Kavalieros, R. Kotlyar, B. Chu-Kung, W. K. Liu, D. Lubyshev, M. Metz, K. Millard, N. Mukherjee, L. Pan, R. Pillarisetty, W. Rachmady, U. Shah, and R. Chau, Tech. Dig.-Int. Electron Devices Meet. 2010, 126.
14. M. Jurczak, T. Skotnicki, M. Paoli, B. Tormen, J.-L. Regolin, C. Morin, A. Schiltz, J. Martins, R. Pantel, and J. Galvier, Tech. Dig. Pap.-Symp. VLSI Technol. 1999, 29.
15. S. Monfray, T. Skotnicki, Y. Morand, S. Descombes, M. Paoli, P. Ribot, A. Talbot, D. Dutartre, F. Leverd, Y. Lefriec, R. Pantel, M. Haond, D. Renaud, M.-E. Nier, C. Vizioz, D. Louis, and N. Buffet, Tech. Dig.-Int. Electron Devices Meet. 2001, 645.
16. C. Seassal, J. L. Leclercq, and P. Viktorovitch, J. Micromech. Microeng. 6, 261 (1996). 10.1088/0960-1317/6/2/008
17. K. Kurishima, S. Yamahata, H. Nakajima, H. Ito, and N. Watanabe, IEEE Electron Device Lett. 19, 303 (1998). 10.1109/55.704407
18. Y. Urabe, N. Miyata, H. Ishii, T. Itatani, T. Maeda, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Yokoyama, N. Taoka, M. Takenaka, and S. Takagi, Tech. Dig.-Int. Electron Devices Meet. 2010, 142.
19. See http://www.synopsys.com/tools/tcad/devicesimulation/pages/ sentaurusdevice.aspx for Synopsys Sentaurus Device Manuals.
20. J. J. Gu, Y. Q. Liu, Y. Q. Wu, R. Colby, R. G. Gordon, and P. D. Ye (unpublished).