Self-aligned n- and p-channel GaAs MOSFETs on undoped and P-type substrates using HfO2 and silicon interface passivation layer

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Ok, InJo ^c   Kim, H ^c   Zhang, M ^c   Lee, T ^c   Zhu, F ^c   Yu, L ^c   Koveshnikov, S ^a   Tsai, W ^a   Tokranov, V ^b   Yakimov, M ^b   Oktyabrsky, S ^b   Lee, Jack C ^c  

^a INTEL CORPORATION   (United States)

^b STATE UNIVERSITY OF NEW YORK   (United States)

^c The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL CHARACTERISTICS; INTERFACE PASSIVATION LAYER (IPL); INTERNATIONAL (CO); MOSFETS; P TYPE SUBSTRATES; P-CHANNEL; SELF ALIGNED (SA);

ELECTRON DEVICES; HAFNIUM COMPOUNDS; PASSIVATION;

GALLIUM ALLOYS;

EID: 46149090845     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346742     Document Type: Conference Paper

References (4)

1. M. Passlack et.al, "Self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor," IEEE EDL vol 23, pp 508-510, September 2002.
2. I. Ok et al, "Depletion-Mode MOSFET on n-GaAs substrate with HfO2 and Silicon Interface Passivation," Conference Digest, DRC, pp. 45-46, 2006
3. 2/ MOS structures on GaAs substrate with and without Si interlayer," IEEE EDL Volume 27, March 2006, pp 145-147
4. Byoung Hun Lee et al, "Ultrathin hafnium oxide with low leakage and excellent reliability for alternative gate dielectric application," in IEDM Tech. Dig., 1999, pp. 133-136.