InP DHBT process in transferred-substrate technology with ft and fmax over 400 GHz

IEEE Transactions on Electron Devices

Volumn 56, Issue 9, 2009, Pages 1897-1903

  Kraemer, Tomas ^a   Rudolph, Matthias ^a   Schmueckle, Franz Josef ^a   Wuerfl, Joachim ^a   Traenkle, Guenther ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

Device fabrication; Device modeling; InP heterojunction bipolar transistors (HBTs); Microstrip components; Wafer bonding

Indexed keywords

CONSTRUCTION KIT; DEVICE FABRICATION; DEVICE MODELING; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH FREQUENCY PERFORMANCE; HIGH YIELD; INP HETEROJUNCTION BIPOLAR TRANSISTORS (HBTS); INP-DHBT; LARGE-SIGNALS; MICROSTRIP COMPONENTS; MILLIMETER WAVE CIRCUITS; MULTILEVEL METALLIZATION; PARASITICS; PASSIVE ELEMENTS; SUBSTRATE TECHNOLOGY;

BICMOS TECHNOLOGY; BIPOLAR TRANSISTORS; DESIGN; PRINTED CIRCUIT DESIGN; THREE DIMENSIONAL; WAFER BONDING;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 69549114288     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2025908     Document Type: Article

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