Enhancement-mode buried-channel In0.7Ga0.3As/ In0.52Al0.48 MOSFETs with high-κ gate dielectrics

IEEE Electron Device Letters

Volumn 28, Issue 6, 2007, Pages 473-475

  Sun, Yanning ^a   Kiewra, E W ^a   Koester, S J ^a   Ruiz, N ^a   Callegari, A ^a   Fogel, K E ^a   Sadana, D K ^a   Fompeyrine, J ^b   Webb, D J ^b   Locquet, J P ^b   Sousa, M ^b   Germann, R ^b   Shiu, K T ^c   Forrest, S R ^c  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM RESEARCH ZURICH   (Switzerland)

^c Princeton University   (United States)

Author keywords

Buried channel; Enhancement mode; High ; InGaAs; MOSFET

Indexed keywords

CARRIER MOBILITY; GATE DIELECTRICS; HIGH ELECTRON MOBILITY TRANSISTORS; LEAKAGE CURRENTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

BURIED CHANNEL; ENHANCEMENT MODE;

MOSFET DEVICES;

EID: 34249811762     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.896813     Document Type: Article

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