SCOPUS 정보 검색 플랫폼

Volumn 98, Issue 24, 2011, Pages

Hot electron injection effect on the microwave performance of type-I/II AlInP/GaAsSb/InP double-heterojunction bipolar transistors

(5) Cheng, K Y Donald a Liao, C C a Xu, H a Cheng, K Y Norman a,b Feng, M a

a University of Illinois at Urbana Champaign (United States)

b NATIONAL TSING HUA UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ALIGNMENTS; COLLECTOR CURRENT DENSITY; COMPOSITION-GRADED; CURRENT GAINS; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH FREQUENCY PERFORMANCE; LAYER STRUCTURES; MICROWAVE PERFORMANCE; SUBMICRON;

CUTOFF FREQUENCY; ELECTRON INJECTION; HETEROJUNCTIONS; HOT ELECTRONS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTING GALLIUM;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 79960602101 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3599582 Document Type: Article

Times cited : (13)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.