Radio-frequency-noise characterization and modeling of type-II InP-GaAsSb DHBT

IEEE Electron Device Letters

Volumn 29, Issue 1, 2008, Pages 21-23

  Chuang, Yu Ju ^a   Cimino, Kurt ^a   Stuenkel, Mark ^a   Snodgrass, William ^a   Feng, Milton ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

Heterojunction bipolar transistors (HBTs); Noise measurement; Noise model

Indexed keywords

CHARACTERIZATION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE;

DOUBLE-HETEROJUNCTION BIPOLAR TRANSISTORS; NOISE MEASUREMENT; NOISE MODEL; RADIO-FREQUENCY-NOISE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 37549061735     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.912017     Document Type: Article

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