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Volumn , Issue , 2008, Pages
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A new silane-ammonia surface passivation technology for realizing inversion-type surface-channel aAs N-MOSFET with 160 nm gate length and high-quality metal-gate/high-k dielectric stack
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Author keywords
[No Author keywords available]
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Indexed keywords
AMMONIA GAS MIXTURES;
BIAS-TEMPERATURE INSTABILITIES;
ENHANCEMENT MODES;
GAAS;
GAAS MOSFET;
GAAS SURFACES;
GATE LENGTHS;
GATE STACKS;
HIGH - K DIELECTRICS;
HIGH QUALITIES;
HIGH-K GATE DIELECTRICS;
HIGH-PERFORMANCE CMOS;
INTERFACE STATE DENSITIES;
INTERFACIAL PASSIVATION LAYERS;
K DIELECTRICS;
MOSFETS;
N-MOSFET;
NATIVE OXIDES;
NOVEL SURFACES;
SUB-THRESHOLD SWINGS;
SURFACE CHANNELS;
SURFACE PASSIVATIONS;
ULTRA-THIN SILICONS;
AMMONIA;
CHEMICAL VAPOR DEPOSITION;
DIELECTRIC MATERIALS;
ELECTRON DEVICES;
ELECTRON MOBILITY;
FORMING;
GALLIUM ALLOYS;
GATE DIELECTRICS;
GATES (TRANSISTOR);
LOGIC GATES;
MOSFET DEVICES;
PASSIVATION;
SEMICONDUCTING SILICON COMPOUNDS;
SILANES;
SILICON NITRIDE;
SEMICONDUCTING GALLIUM;
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EID: 64549101494
PISSN: 01631918
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/IEDM.2008.4796700 Document Type: Conference Paper |
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Times cited : (20)
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References (10)
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