Over 450-GHz ftand fmaxInP/InGaAs DHBTs with a passivation ledge fabricated by utilizing SiN/SiO2sidewall spacers

IEEE Transactions on Electron Devices

Volumn 61, Issue 10, 2014, Pages 3423-3428

  Kashio, Norihide ^a   Kurishima, Kenji ^a   Ida, Minoru ^a   Matsuzaki, Hideaki ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Current gain; InP heterojunction bipolar transistor (HBT); ledge passivation; reliability

Indexed keywords

CURRENT GAINS; INP HETEROJUNCTION BIPOLAR TRANSISTORS; INP/INGAAS; SIDEWALL SPACER;

RELIABILITY;

EID: 84907452182     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2014.2349872     Document Type: Article

References (18)

1. M. Ida, K. Kurishima, K. Ishi, and N. Watanabe, "High-speed InP/InGaAs DHBTs with a thin pseudomorphic base," in Proc. IEEE 25th GaAs IC Symp., Nov. 2003, pp. 211-214.
2. N. Kashio, K. Kurishima, K. Sano, M. Ida, N. Watanabe, and H. Fukuyama, "Monolithic integration of InP HBTs and uni-travelingcarrier photodiodes using nonselective regrowth," IEEE Trans. Electron Devices, vol. 54, no. 7, pp. 1651-1657, Jul. 2007.
3. K. Kurishima, M. Ida, N. Kashio, and Y. K. Fukai, "Performance of InP/InGaAs HBTs with a thin highly n-type doped layer in the emitterbase heterojunction vicinity," IEICE Trans. Electron., vol. E95-C, no. 8, pp. 1310-1316, Aug. 2012.
4. M. Nagatani, H. Nosaka, K. Sano, K. Murata, K. Kurishima, and M. Ida, "A 60-GS/s 6-Bit DAC in 0.5-m InP HBT technology for optical communication systems," in Proc. IEEE CSICS, Oct. 2011, pp. 1-4.
5. M. Nagatani, Y. Bouvier, H. Nosaka, and K. Murata, "A 3-Vppd 730-mW linear driver IC using InP HBTs for advanced optical modulations," in Proc. IEEE CSICS, Oct. 2013, pp. 1-4.
6. V. Jain et al., "InGaAs/InP DHBTs in a dry-etched refractory metal emitter process demonstrating simultaneous fT/fmax?430/800 GHz," IEEE Electron Device Lett., vol. 32, no. 1, pp. 24-26, Jan. 2011.
7. M. Urteaga, R. Pierson, P. Rowell, V. Jain, E. Lobisser, and M. J. W. Rodwell, "130 nm InP DHBTs with ft 0.52 THz and fmax 1.1 THz," in Proc. 69th Annu. Device Res. Conf., Jun. 2011, pp. 281-282.
8. K. Kurishima, S. Yamahata, H. Nakajima, H. Ito, and N. Watanabe, "Initial degradation of base-emitter junction in carbon-doped InP/InGaAs HBTs under bias and temperature stress," IEEE Electron Device Lett., vol. 19, no. 8, pp. 303-305, Aug. 1998.
9. E. Tokumitsu, A. G. Dentai, and C. H. Joyner, "Reduction of the surface recombination current in InGaAs/InP pseudo-heterojunction bipolar transistors using a thin InP passivation layer," IEEE Electron Device Lett., vol. 10, no. 12, pp. 585-587, Dec. 1989.
10. M. Yanagisawa, K. Kotani, T. Kawasaki, R. Yamabi, S. Yaegassi, and H. Yano, "A robust all-wet-etching process for mesa formation of InGaAs-InP HBT featuring high uniformity and high reproducibility," IEEE Trans. Electron Devices, vol. 51, no. 8, pp. 1234-1240, Aug. 2004.
11. Y. K. Fukai, K. Kurishima, M. Ida, S. Yamahata, and T. Enoki, "Highly reliable InP-based HBTs with a ledge structure operating at high collector current density," Electron. Commun. Jpn. II, Electron., vol. 90, no. 4, pp. 1-8, Apr. 2007.
12. N. Kashio, K. Kurishiam, Y. K. Fukai, S. Yamahata, and Y. Miyamoto, "Emitter layer design for high-speed InP HBTs with high reliability," in Proc. IEEE 19th Int. Conf. IPRM, May 2007, pp. 441-442.
13. N. Kashio, K. Kurishima, Y. K. Fukai, and S. Yamahata, "Highly reliable submicron InP-based HBTs with over 300-GHz ft ," IEICE Trans. Electron., vol. E91-C, no. 7, pp. 1084-1090, Jul. 2008.
14. N. Kashio, K. Kurishima, Y. K. Fukai, M. Ida, and S. Yamahata, "Highspeed and high-reliability InP-based HBTs with a novel emitter," IEEE Trans. Electron Devices, vol. 57, no. 2, pp. 373-379, Feb. 2010.
15. N. Kashio, K. Kurishiam, Y. K. Fukai, M. Ida, and S. Yamahata, "0.25-m-emitter InP heterojunction bipolar transistors with a thin ledge structure ," Jpn. J. Appl. Phys., vol. 49, no. 4S, pp. 04DF02-1-04DF02-5, 2010.
16. M. C. A. M. Koolen, J. A. M. Geelen, and M. P. J. G. Versleijen, "An improved de-embedding technique for on-wafer high-frequency characterization," in Proc. Bipolar Circuits Technol. Meeting, Sep. 1991, pp. 188-191.
17. S. J. Spiegel, D. Ritter, R. A. Hamm, A. Feygenson, and P. R. Smith, "Extraction of the InP/InGaAs heterojunction bipolar transistor smallsignal equivalent circuit," IEEE Trans. Electron Devices, vol. 42, no. 6, pp. 1059-1064, Jun. 1995.
18. M. Ida, K. Kurishima, and N. Watanabe, "Over 300 GHz fT and fmax InP/InGaAs double heterojunction bipolar transistors with a thin pseudomorphic base," IEEE Electron Device Lett., vol. 23, no. 12, pp. 694-696, Dec. 2002.