Degradation mechanism and reliability improvement of InGaAs/InAlAs/InP HEMTs using new gate metal electrode technology

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn 2005, Issue , 2005, Pages 223-226

  Chou, Y C ^a   Grundbacher, R ^a   Leung, D ^a   Lai, R ^a   Kan, Q ^a   Eng, D ^a   Liu, P H ^a   Block, T ^a   Oki, A ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NEW GATE METAL ELECTRODE TECHNOLOGY (NGMET); NORTHROP GRUMMAN SPACE TECHNOLOGY (NGST); SCANNING TRANSMISSION MICROSCOPE (STEM);

ELECTRODES; ENERGY DISPERSIVE SPECTROSCOPY; HIGH ELECTRON MOBILITY TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM PHOSPHIDE; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 33747432919     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2005.1517462     Document Type: Conference Paper

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